Novel field-effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dae Woong | - |
dc.contributor.author | Song, Jae-Won | - |
dc.contributor.author | Park, Young Min | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.contributor.author | Park, Tae Joo | - |
dc.date.accessioned | 2021-06-22T14:04:19Z | - |
dc.date.available | 2021-06-22T14:04:19Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1062-7995 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9638 | - |
dc.description.abstract | Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field-effect passivation performance. Here, we report that simple annealing in a H2S ambient induced additional negative fixed charges at the interface between atomic-layer-deposited Al2O3 and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to similar to 5.9x10(12)cm(-2) and similar to 780s, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright (C) 2017 John Wiley & Sons, Ltd. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | John Wiley & Sons Inc. | - |
dc.title | Novel field-effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1002/pip.2873 | - |
dc.identifier.scopusid | 2-s2.0-85013395131 | - |
dc.identifier.wosid | 000398637300004 | - |
dc.identifier.bibliographicCitation | Progress in Photovoltaics: Research and Applications, v.25, no.5, pp.376 - 383 | - |
dc.relation.isPartOf | Progress in Photovoltaics: Research and Applications | - |
dc.citation.title | Progress in Photovoltaics: Research and Applications | - |
dc.citation.volume | 25 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 376 | - |
dc.citation.endPage | 383 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC-LAYER-DEPOSITION | - |
dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | ALUMINUM | - |
dc.subject.keywordPlus | DECOMPOSITION | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | H2S | - |
dc.subject.keywordAuthor | nanostructured Si solar cells | - |
dc.subject.keywordAuthor | field-effect passivation | - |
dc.subject.keywordAuthor | sulfur passivation | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pip.2873 | - |
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