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IEEE International Reliability Physics Symposium Proceedings

Journal Title

  • IEEE International Reliability Physics Symposium Proceedings

ISSN

  • 1541-7026

Publisher

Listed on(Coverage)

SJR2002-2017;2019
SCOPUS2017

Active

  • NA

Article List

1 - 6 out of 6 results.

SCIESCOPUS
Study of TID effects on one row hammering using gamma in DDR4 SDRAMsGo to Link

Yun, Donghyuk; Park, Myungsang; Lim, Chulseung; Baeg, Sanghyeon

ArticleIssue Date2018CitationIEEE International Reliability Physics Symposium Proceedings, v.2018, pp.PSE.21 - PSE.25PublisherInstitute of Electrical and Electronics Engineers Inc.
SCOPUS
Fast cell level characterization and reliability evaluation for advanced flexible mobile displayGo to Link

Kim, Heejin; Lee, Jongwon; Bang, Juhyun; Lee, Boram; Hwang, Youngsun; Park, Jongwoo; Lee, Kyungwon; Shin, Dong Soo

ArticleIssue Date2017CitationIEEE International Reliability Physics Symposium Proceedings, pp.6C6.1 - 6C6.6PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Soft error study on DDR4 SDRAMs using a 480 MeV proton beamGo to Link

Park, Myungsang; Jeon, Sanghoon; Bak, Geunyong; Lim, Chulseung; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard; Yu, Nick

ArticleIssue Date2017CitationIEEE International Reliability Physics Symposium Proceedings, pp.1 - 6PublisherInstitute of Electrical and Electronics Engineers Inc.
SCOPUS
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beamsGo to Link

Bak, Geunyong; Lee, Soonyoung; Lee, Hosung; Park, Kyungbae; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard; Slayman, Charlie

ArticleIssue Date2015CitationIEEE International Reliability Physics Symposium Proceedings, v.2015, pp.SE31 - SE35PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
AC-DC factor sensitivity for DRAM components lifetime under hot-carrier injectionGo to Link

Baeg, Sanghyeon; Nam, Haewoon; Chia, Pierre; Wen, Shijie; Wong, Richard

ArticleIssue Date2011CitationIEEE International Reliability Physics Symposium ProceedingsPublisherIEEE
SCIESCOPUS
Multiple cell upsets tolerant content-addressable memoryGo to Link

Abbas, Syed mohsin; Baeg, Sanghyeon; Park, Sungju

ArticleIssue Date2011CitationIEEE International Reliability Physics Symposium Proceedings, pp.SE.1.1 - SE.1.5PublisherIEEE
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