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Technical Digest - International Electron Devices Meeting

Journal Title

  • Technical Digest - International Electron Devices Meeting

ISSN

  • 0163-1918

Publisher

Listed on(Coverage)

SJR 1999-2017;2019
CiteScore 2011-2019
SCOPUS 2017-2020

Active

  • Active

    based on the information

    • CITESCORE;

Article List

1 - 4 out of 4 results.

SCOPUS
Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technologyGo to Link

Beyne, Eric; Kim, Soon-Wook; Peng, Lan; Heylen, Nancy; De Messemaeker, Joke; Okudur, Oguzhan Orkut; Phommahaxay, Alain; Kim, Tae-Gon; Stucchi, Michele; Velenis, Dimitrios, et al.

ArticleIssue Date2018CitationTechnical Digest - International Electron Devices Meeting, IEDM, pp.32.4.1 - 32.4.4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Device and circuit interactive design and optimization beyond the conventional scaling eraGo to Link

Oh, Saeroonter; Wei, Lan; Chong, Soogine; Luo, Jieying; Wong, H.-S.Philip

ArticleIssue Date2010CitationTechnical Digest - International Electron Devices Meeting, IEDM, pp.1 - 1PublisherIEEE
SCIESCOPUS
Performance benchmarks for Si, III-V, TFET, and carbon nanotube FET - Re-thinking the technology assessment methodology for complementary logic applicationsGo to Link

Wei, Lan; Oh, Saeroonter; Wong, H.-S.Philip

ArticleIssue Date2010CitationTechnical Digest - International Electron Devices Meeting, IEDM, pp.1 - 4PublisherIEEE
SCIESCOPUS
Investigation of the performance limits of III-V double-gate n-MOSFETsGo to Link

Pethe, Abhijit; Krishnamohan, Tejas; Kim, Donghyun; Oh, Saeroonter; Wong, H.S. Philip; Nishi, Yoshio; Saraswat, Krishna C.

ArticleIssue Date2005CitationTechnical Digest - International Electron Devices Meeting, IEDM, v.2005, pp.605 - 608PublisherIEEE
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