ScholarWorks@Hanyang University ERICA Campus: Jiwon, Lee

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Jiwon, Lee (이지원)

COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)

Research Area: 반도체 이미지 센서

Tel 031-400-5489
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Image sensors:2||infrared imaging:2||Silicon:2||CMOS image sensor (CIS):1||CMOS image sensors:1||CMOS image sensors (CISs):1||CMOS integrated circuit:1||CMOS integrated circuits:1||Capacitance:1||Colloidal quantum dot (CQD) image sensors:1||Current measurement:1||Dark current:1||Dark current spectroscopy (DCS):1||Detectors:1||Fluorescence:1||Hardware security:1||Highspeed optical techniques:1||Imaging:1||Junctions:1||Logic gates:1||Photodiodes:1||Photonic integrated circuits:1||Quantum dot (QD) complementary metaloxide semiconductor (CMOS) image sensor (QDCIS):1||Radiation effects:1||SWIR image sensor:1||Security circuit:1||Sensors:1||Singlephoton avalanche diode (SPAD):1||Substrates:1||Taguchi method:1||Temperature measurement:1||Voltage:1||Wavelength measurement:1||Xray imaging:1||Xray radiation effect:1||active pixel sensors:1||charge focusing:1||chargeblocking layer:1||colloidal quantum dots:1||correlatedmultiplesampling (CMS):1||dark current:1||dualmode:1||dynamic range:1||fluorescence lifetime imaging microscopy (FLIM):1||high dynamic range:1||high specific detectivity:1||highresolution infrared imaging:1||image lag:1||image sensors:1||infrared image sensors:1||integrated photodetectors:1||junction capacitance:1||large full well capacity:1||lead sulfide (PbS):1||light detector:1||lowpower:1||mercury telluride (HgTe):1||multitap image sensor:1||near infrared:1||nearinfrared (NIR):1||nearinfrared enhanced SPAD:1||organic photodetector:1||phase errors:1||photodiodes:1||photonassisted tunneling:1||photonic circuit calibration:1||power reduction techniques:1||quantum dots:1||shallow trench isolation:1||shortwave infrared (SWIR):1||shortwave infrared (SWIR) image sensors:1||silicon photodiode:1||singlephoton avalanche diode (SPAD):1||spherically uniform field peak:1||suppressed blooming:1||thinfilm photodetectors:1||thinfilm photodiode:1||thinfilm sensors:1||time gating:1||timeofflight (ToF):1||Active pixel sensors:1||total ionizing dose (TID):1||Backside illumination (BSI):1||CMOS image sensor:1||

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