ScholarWorks@Hanyang University ERICA Campus: Jeong, Hee jun

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Jeong, Hee jun (정희준)

HANYANG INSTITUTE FOR TALENT DEVELOPMENT (CENTER FOR CREATIVE CONVERGENCE EDUCATION)

Research Area: 응집체물리/중시물리학

Tel 031-400-5479
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molecular electronics:4||GaAs:3||quantum well:3||selfassembled monolayer:3||metalmoleculemetal junction:2||FABRICATION:2||direct metal transfer:2||quantum dot:2||METAL JUNCTIONS:2||SELFASSEMBLED MONOLAYERS:2||ELECTRONTRANSPORT:2||32 nm line and space halfpitch:2||shot noise:2||ZrO2:2||QWIP:2||electron beam lithography:2||optical proximity correction (OPC):2||transmission:2||SPECTROSCOPY:2||Kondo effect:2||Shot noise:2||SiGe:2||ATOMICFORCE MICROSCOPY:2||Leakage current:2||zebra patterns:2||lithography:2||NavierStokes equation:2||Generationrecombination:2||Fano resonance:1||GATE DIELECTRICS:1||GOLD:1||Highk:1||INTEGRATION:1||JUNCTIONS:1||Kondo phenomenon:1||Lithography simulation:1||Lowfrequency noise:1||MECHANISM:1||MICROSCOPY:1||MIM structures:1||Molecular Devices:1||Multilayer Graphene (MLG):1||NONLINEAR TRANSPORT:1||Nanowire:1||OXIDE:1||PLD:1||Passive picocell:1||Phototransistor:1||Postdeposition annealing:1||Quantum dot:1||RESISTIVE MEMORY:1||RITD:1||RTS:1||Radiooverfiber:1||Random telegraph signal:1||Resist reflow process:1||Resonant interband tunneling diodes:1||SHOTNOISE:1||SI:1||SINGLE:1||SPIN BLOCKADE:1||TEMPERATUREDEPENDENCE:1||TRANSISTOR:1||TRANSPORT:1||TaucLorentz:1||Trap:1||Trap energy level:1||Vertical and horizontal devices:1||ZnO:1||ZnO film:1||ZnO nanowire:1||alkanethiolates:1||alternating phase shift mask:1||benzeneditholates:1||bias:1||chirp:1||chromeless phase lithography (CPL):1||chromeless phase shift mask:1||coherent transport:1||contrast:1||crosslink:1||diarylethene molecules:1||double dot:1||electrical conductivity:1||electrical contacts:1||electroabsorption:1||electrodes:1||electromigration:1||ellipsometry:1||finite element model:1||flexible electronic devices:1||flexible electronics:1||haze:1||inelastic electron tunneling spectroscopy (IETS):1||lateral quantization:1||localized states:1||material discontinuity:1||microstructure:1||modulator:1||molecular junctions:1||molecular state:1||monte Carlo Method:1||multilayer graphene (MLG):1||nanostructures:1||negative resist:1||noise characterization:1||organic compounds:1||organic memory:1||organic nanocomposite:1||peak spacing:1||pellicle:1||percolation:1||phase:1||photomask:1||photoswitching:1||pitch:1||porosity:1||porous elasticity modulus:1||1/F NOISE:1||quantum confinement:1||random telegraph noise:1||resist reflow process:1||scattering bars:1||scattering bars (SBs):1||silver:1||spin:1||statistical analysis:1||step barrier:1||tunnelling spectra:1||undercut:1||unipolar resistive memory:1||vibrational states:1||wet etching:1||proximity effect:1||1/f noise:1||ATOM:1||Annealing:1||BARRIER HEIGHT:1||BREAK JUNCTIONS:1||Benzenethiols:1||Breakdown:1||CELL:1||CHARGELIMITED CURRENTS:1||CHARGETRANSPORT:1||CONDUCTANCE:1||CONDUCTION:1||Carrier lifetime:1||Coulomb blockade:1||Crosscorrelation:1||Current noise:1||DEPOSITION:1||DEVICES:1||DIFFUSION NOISE:1||Defect relaxation:1||ELECTRICALPROPERTIES:1||ELECTROMIGRATION:1||ELECTRONTUNNELING SPECTROSCOPY:1||ELEMENTS:1||Electroabsorption:1||Electron Beam Lithography:1||Ellipsometry:1||

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