ScholarWorks@Hanyang University ERICA Campus: Shin, Dong Soo

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Shin, Dong Soo (신동수)

COLLEGE OF ADVANCED TECHNOLOGY AND CONVERGENCE (MAJOR IN SEMICONDUCTOR AND DISPLAY ENGINEERING)

Research Area: 광전자학, 소자물리학, Optoelectronics, Device physics

Tel 031-400-5488
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lightemitting diodes:9||Lightemitting diodes:9||GaN:7||piezoelectric field:6||internal quantum efficiency:5||quantum well:5||photocurrent:5||defects:4||lightemitting diode:4||step barrier:4||efficiency droop:4||Internal quantum efficiency:3||ideality factor:3||InGaN:3||electroabsorption:3||electroreflectance:3||Lightemitting diode:3||optical proximity correction (OPC):3||RF gain:3||transmission:3||lightemitting diodes (LEDs):3||radiative current:2||characterization:2||electroabsorption (EA):2||zebra patterns:2||nonradiative recombination:2||nonradiative current:2||EFFICIENCY:2||INTENSITY:2||opencircuit voltage:2||Light emitting diodes:2||Organic lightemitting diodes:2||bias:2||spurious free dynamic range:2||lithography:2||strain:2||Electroabsorption modulator:2||Quantum wells:2||LEDS:2||flatband voltage:2||degradation:2||point defects:2||thickness:2||CURRENTS:2||gallium nitride:2||potential fluctuation:2||GAN:2||GaNSb:1||Goodman and Rose theory:1||IIIV semiconductors:1||IIInitride optoelectronic semiconductors:1||Inrich area:1||Inrich quntum disk:1||InGaN quantum well:1||InGaN/GaN quantum wells:1||JUNCTIONTEMPERATURE:1||Junction temperature:1||LIV (luminancecurrent voltage):1||LC connector:1||LED:1||LEDs:1||LIFETIMES:1||LIGHT EMITTING DIODES:1||Leakage currents:1||Light emitting diode:1||Lorentzian plasmas:1||MEMS:1||MOCVD:1||Mg:1||Mg diffusion:1||Nearultraviolet lightemitting diodes:1||NiO:1||OLED (organic light emitting diode):1||Optical devices:1||Optical polarization:1||PNJUNCTIONS:1||PIEZOELECTRIC FIELD:1||POLARIZATION:1||Passivation External quantum efficiency Gallium Interfaces Plasma enhanced chemical vapor deposition Oxygen Crystals:1||Passive picocell:1||Performance evaluation:1||Photoconductivity:1||Photocurrent spectroscopy:1||Phototransistor:1||Piezoelectric field:1||Power generation:1||Qcheck system:1||QUANTUM EFFICIENCY:1||QUANTUMWELL LASERS:1||QUANTUMWELLS:1||QW pair:1||Quantum well:1||Quantum well devices:1||RECOMBINATION:1||RECOMBINATION DYNAMICS:1||RF packaging:1||RGA:1||Radiative recombination:1||Radiative recombination rate:1||Radiooverfiber:1||Reliability:1||Sparameter:1||SEMEDX:1||SEMICONDUCTOR MATERIALS:1||SILICO:1||Saturation:1||Shockley equation:1||Simulation:1||Stokes shift:1||Strain:1||Strain relaxation:1||Surface temperature:1||Temperature measurement:1||Thermal properties:1||Thermal stability:1||Thermoreflectance:1||Timeresolved photoluminescence:1||Transient:1||Tunable laser:1||UVozone:1||Voltage measurement:1||Wide band gap semiconductors:1||XPS:1||absorption:1||accelerated aging:1||activation:1||adhesion:1||alternating phase shift mask:1||analog optical transmitter:1||attenuated phase shift mask (att.PSM):1||average optical power:1||axisymmetric:1||bending:1||blue & green microLEDs:1||buckling load:1||carrier distribution:1||carrier lifetime:1||carrier localization:1||carrier spillover:1||carrier transport processes:1||catastrophic mirror damage:1||cell level reliability:1||charge screening effect:1||charge transfer mechanism:1||chirp:1||chromeless phase lithography (CPL):1||chromeless phase lithography (CPL) mask:1||chromeless phase shift mask:1||coefficient of thermal expansion (CTE):1||composition:1||contact angle measurement:1||cure kinetics:1||currentvoltage measurement:1||defect:1||degradation mechanism:1||diode equation:1||diodes:1||distributed Bragg reflector (DBR) lasers:1||efficiency:1||electroabsorption modulator:1||electroluminescence:1||electron beam lithography:1||ellipsometry:1||epiwafer:1||epoxy:1||equivalent circuits:1||escape time:1||external quantum efficiency:1||extinction ratio:1||extinction ratio (ER):1||fiber pistoning:1||finitedifference timedomain method:1||forward voltage:1||gallium compounds:1||glass transition temperature:1||haze:1||high optical power:1||impedance:1||impedance matching:1||impedance spectroscopy:1||indium composition:1||industrial mass production:1||injection efficiency:1||joint density of states:1||junction temperature:1||laser diode:1||laser module:1||leakage current:1||light emitting diode:1||linewidth enhancement factor:1||low temperature:1||lownoise amplifier:1||lozenge:1||mesasidewall:1||metallic nano double box:1||metallic nano double slit:1||metrology:1||microLEDs:1||microstripline bandpass filter:1||modulation spectroscopy:1||modulator:1||multiple quantum well:1||multiple quantum wells:1||nGaN thickness:1||nanostructures:1||nearfield scanning optical microscope:1||noise figure:1||nonthermal effects:1||nonuniform bow:1||optical fiber communication:1||optical gain:1||optical loss:1||optical processes:1||optoelectronic devices:1||organic lightemitting diodes:1||outgassing:1||oxygen plasma:1||passivation:1||peak wavelength:1||pellicle:1||peripheral coupled waveguide:1||phase:1||photodetectors:1||photoluminescence:1||photomask:1||photosensitive polymer:1||pitch:1||plane strain:1||polarization:1||potential drop:1||power conversion efficiency:1||pump laser:1||quantum confinement:1||quantumconfined Stark effect:1||radiative recombination:1||recombination rate:1||reference point:1||reflectivity spectrum:1||refractive index:1||refractive index change:1||reliability:1||resistance switching:1||resonance:1||resonant photoluminescence:1||roomtemperature referencepoint method:1||saturation:1||saturation of radiative recombination rate:1||scattering bars:1||scattering bars (SBs):1||screening:1||semiconductor epitaxial layers:1||sensitivity:1||shaping:1||space–chargelimited photocurrents:1||spacechargelimitedcurrent:1||storage modulus:1||strain relaxation:1||stress:1||systemonpackage (SOP):1||systemonpackaging (SOP) transmitter:1||taper:1||temperature distribution:1||temperaturedependent electroluminescence:1||temperaturedependent electroluminescence (TDEL):1||thermal analysis:1||thermal tuning:1||thin film heater:1||threading dislocations (TDs):1||timecorrelated single photon counting:1||timeresolved photoluminescence:1||typeII quantum wells:1||ultraviolet (UV) lightemitting diodes (LEDs):1||undercut:1||variablerange hopping (VRH):1||variation:1||void:1||wafer stress:1||waveguide:1||wide band gap semiconductors:1||45nm line and space:1||액정 이온, liquid crystal on Silicon(LCos):1||60 GHz:1||60GHz radiooverfiber (ROF):1||64quadrature amplitude modulation (QAM):1||71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CURRENT DENSITY:1||75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY:1||Aluminum gallium nitride:1||Astrophysical plasmas:1||Atomic processes:1||BLUE:1||Blueshift:1||CV (capacitancevoltage):1||Capacitance:1||Capacitancevoltage characteristics:1||Carrier lifetime:1||Characterization:1||Charge recombination and transport:1||Circuit modeling:1||Compton scattering:1||Crystal quality:1||Crystals:1||Current measurement:1||DC 오프셋 전압:1||DEVICES:1||Degradation:1||Dot emission:1||Droop:1||Drude Model:1||EAM:1||EL (emissive layer):1||ELECTRODE PATTERN DESIGN:1||ELECTROLUMINESCENCE:1||ELECTROREFLECTANCE:1||EMISSION:1||EPITAXY:1||EXCITON:1||Efficiency droop:1||Electrical properties:1||Electroabsorption:1||Electroluminescence:1||Electroreflectance:1||Electroreflectance spectroscopy:1||Epitaxial growth:1||Extraction efficiency:1||FILMS:1||FTIR:1||GREEN:1||

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