ScholarWorks@Hanyang University ERICA Campus: KIM, JUNG HYUN

Detailed Information

KIM, JUNG HYUN (김정현)

ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)

Research Area: 공학대학, 전자공학, College of Engineering, Electrical Engineering

Tel 031-400-4750
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

power amplifier (PA):10||WCDMA:7||MMIC:5||transformer (TF):4||Band switching:4||GaN HEMT:4||matching network:4||reconfigurable:3||Load Insensitive:3||efficiency:3||Balanced Power Amplifier:3||Impedance:3||Load Mismatch:3||silicononinsulator:2||Anomaly Detection:2||multilayer:2||small formfactor:2||concurrent:2||multioctave:2||Multiband:2||Antenna mismatch:2||switch:2||differential:2||InGaP/GaAs:2||linearity enhancement:2||Efficiency:2||5G mobile communication:2||distributed amplifier (DA):2||SSPA:2||Broadband:2||Internet Measurement:2||Switches:2||power amplifier:2||wireless local area network (WLAN):2||power amplifiers (PAs):2||Switching circuits:2||printed circuit board (PCB):2||GaAs pHEMT:2||GaN MMIC:2||radio frequency (RF):2||Wband:2||WCDMA:2||RF:2||heterojunction bipolar transistor (HBT):2||RF switch:2||multiband:2||Logic gates:2||multimode:2||broadband amplifier:2||HBT power amplifier (PA):1||Harmonic Matching:1||Heterojunction bipolar transistor (HBT):1||High frequency:1||Highfrequency electrosurgical generator (ESG):1||HoPiPD:1||Impedance matching:1||Impedance tuner:1||InGaP/GaAs heterojunction bipolar transistor (HBT):1||Inorganic salts:1||Input matching network:1||Internet Security:1||Internet of Things:1||Kband:1||LNA:1||Lownoise amplifier (LNA):1||Matching network:1||Multichannel:1||Noise optimum impedance:1||Optimized production technology:1||Organic matter:1||PA:1||Parallel resonance:1||Plasma generator:1||Power amplifier:1||Primary marine aerosol:1||Pseudomorphic high electron mobility transistor (pHEMT):1||Qband:1||QMR:1||RF source module:1||RFIC:1||Radio frequency:1||Reconfigurable:1||Resistors:1||Resonant frequency:1||Riverdominated coastal systems:1||SO FET impedance mismatch detector:1||SOI:1||SOI CMOS:1||SOI FET TOMN:1||Sampling Technique:1||Series resonance:1||Trajectory:1||TransformerBased Neutralization:1||Transistors:1||UMTS:1||WBand:1||angled dipole:1||antenna mismatch:1||bandwidth:1||beamwidth:1||common gate:1||common source:1||coupled line:1||coupledlinebased diplexer:1||dielectric thickness:1||diplexer:1||diplexers:1||dipole antenna:1||directional coupler:1||dual coupler:1||dualband PA:1||dualband amplifiers:1||dualpower mode (DPM):1||efficiency enhancement:1||envelope tracking power amplifier:1||extended Doherty concept:1||fifth generation (5G):1||formfactor:1||frontend stage:1||gallium arsenide:1||gallium nitride (GaN):1||heat spreader:1||helixonpad:1||helixonpad (HoP):1||high Qfactor:1||high power:1||highfrequency fullbridge (FB) inverter:1||highpower handling:1||impedance matching:1||impedance transformer:1||inductor:1||integrated passive device:1||integration:1||interstage matching technique:1||laparoscopic surgery:1||licensedassisted access (LAA):1||linearity improvement:1||load insensitive HBT PA:1||load insensitive mismatch correction:1||loadpull measurement:1||longterm evolution:1||longterm evolution (LTE):1||lookup table (LUT):1||lowcharacteristic impedance transmission line:1||maximum available gain:1||microstrip line:1||microstripcoupled line:1||microwave:1||millimeter wave:1||millimeterwave (mmwave):1||millimeterwave(mmW):1||miniaturization:1||mismatch detection:1||mmWave:1||modeling:1||monolithic microwave integrated circuit (MMIC):1||monolithic transformer:1||multichannels:1||multioctave:1||multiband:1||multifinger:1||multilayer printed circuit board (PCB):1||multilayer substrate:1||multipower mode:1||neutralization:1||noise figure:1||output power:1||parallel:1||partially depleted silicononinsulator (PDSOI):1||passive component:1||pentaband UMTS/LTE:1||phase noise:1||phasedarray receiver:1||plasma generator:1||power added efficiency (PAE):1||power amplifier (PA):1||power amplifier module:1||predistorter:1||programmable control:1||pseudomorphic high electron transistor (pHEMT):1||quadband GMSK/EDGE:1||quality factor:1||quantum molecular resonance:1||reactively matched PA:1||reconfigurable LNA:1||reconfigurable component:1||reconfigurable power amplifier (PA):1||resonance:1||resonance filter:1||satellite communications (SATCOM):1||selfheating:1||series resonance.:1||seriestype Doherty amplifier:1||signaltonoise ratio:1||silicon on insulator (SOI):1||silicononinsulator (SOI) fieldeffect transistor (FET) impedance mismatch detector:1||single PAcore:1||singlepole doublethrow (SPDT):1||small size:1||solidstate power amplifier:1||stagebypass PA:1||surgical energy device:1||surgical smoke:1||switchless:1||system in package (SiP):1||thermal conductivity:1||thermal coupling:1||thermal interface materials (TIMs):1||thermal resistance:1||transmission line:1||tunable capacitor:1||tunable output matching network (TOMN):1||variable impedance:1||vessel sealing technologies:1||wide load impedance range:1||wideband code division multiple access (WCDMA):1||사례연구:1||이상탐지:1||인터넷 보안:1||0.15–μm GaAs pHEMT:1||인터넷 평가:1||5G new radio unlicensed (NRU):1||5G new radiounlicensed (5G NRU):1||802.11ax:1||Amplifier:1||Analysis:1||Antenna arrays:1||Antenna measurements:1||Antenna radiation patterns:1||Balanced power amplifier:1||Baluns:1||Bandwidth:1||Broadband amplifier:1||Broadband amplifiers:1||CMOS:1||Chamber study:1||Channel output balance:1||Chiplevel packaging structure:1||Chipstacking:1||Concurrent:1||Concurrent dualband:1||Copper foil residual ratio:1||Coupling switching:1||Crosscoupled capacitor (Ccc):1||Differential:1||Differential power amplifier (PA):1||Digitally tunable capacitor (DTC):1||Dipole antennas:1||Doherty amplifier:1||Drive amplifier:1||Dual band:1||DualBand:1||Dualband:1||EDGE:1||Empirical Study:1||Entropy Analysis:1||Fast switching time:1||Frequency Doubler:1||Frequency multiplier:1||Frequency split:1||GBand:1||GSM:1||GaAs:1||GaAs HBT:1||GaN monolithic microwave integrated circuit (MMIC):1||GaN monolithic microwave integrated circuit (MMICs):1||GaNonsilicon:1||Gain:1||HBT:1||

STATISTICS: Total View :0; Today View :0

RSS_1.0 RSS_2.0 ATOM_1.0

55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE