ScholarWorks@Hanyang University ERICA Campus: Yoo, Bong young

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Yoo, Bong young (유봉영)

COLLEGE OF ADVANCED TECHNOLOGY AND CONVERGENCE (MAJOR IN ADVANCED MATERIALS AND SEMICONDUCTOR ENGINEERING)

Research Area: 나노 공정 및 응용전기화학

Tel 031-400-5229
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Electrodeposition:12||electrodeposition:10||Plasma electrolytic oxidation:9||FILMS:7||plasma electrolytic oxidation:5||THINFILMS:5||SOLARCELLS:4||Electroless deposition:4||magnesium alloy:4||Magnesium alloy:4||ELECTRODEPOSITION:4||Thermoelectric:3||Corrosion resistance:3||Microstructure:3||corrosion:3||Electropolishing:3||MORPHOLOGY:3||Electrochemical techniques:3||Copper:3||Corrosion:3||NANOPARTICLES:3||Polypyrrole:2||Chemical synthesis:2||Potential difference:2||Powder consolidates:2||Grain growth:2||ENERGYCONVERSION:2||HEAT:2||selfannealing:2||DEPOSITION:2||Seebeck coefficient:2||electrocatalysts:2||Complexing agent:2||RDL:2||Bi0.5Sb1.5Te3:2||NANOSTRUCTURES:2||Throughglass via:2||ROOMTEMPERATURE:2||DEVICES:2||thermoelectric:2||NANOWIRES:2||thin films:2||Sensor:2||ALUMINUM:2||galvanic displacement:2||PERFORMANCE:2||Electrical properties:2||NICKEL:2||Cu:2||Ru electrodeposition:2||Cu electrodeposition:2||PHOTOCATHODE:2||hydrogen evolution reaction:2||Solar cell:2||EFFICIENCY:2||METALOXIDES:2||FOWLP:2||AlSi alloy:2||POWER:2||SHAPE CONTROL:2||Ammonia:2||ZrO2:2||Supercapacitors:2||alphaCo(OH)(2):2||Metal 3D Printer:2||Nanowire:2||Surface modification:2||Mg alloy:2||nanowires:2||TECHNOLOGY:2||ELECTRODES:2||GROWTH:2||TSV:2||Catalytic combustion:1||CdSe:1||CdTe:1||Chalcogenide:1||Chemical reaction pathway:1||Chitosan:1||CoFe:1||CoNi alloy:1||CoNi hydroxide nanosheet:1||Cobalt IronPhosphorus:1||Compositionally modulated FePd nanowire:1||Conductive ink:1||Cones:1||Coppertocopper direct bonding:1||Corrosion resistance.:1||Corrosion resistivity:1||Crystal structure:1||Crystallographic orientation:1||CuCu direct bonding:1||CutoCu bonding:1||Cupric oxide:1||Current density:1||DDS (Drug Delivery System):1||DECOMPOSITION:1||DETECTOR MATERIAL:1||DEVICE:1||DFT:1||DFT calculation:1||DSSC:1||Defectfree filling:1||Diamond powder:1||Diamond wire saw:1||Diamond wire sawing:1||Diamond wire sawn multicrystalline silicon:1||Diffusion Coefficient:1||Direct Injection Molding:1||Direct current electrodeposition:1||Dispersant:1||EALD:1||EAS Process:1||EC mechanism:1||ECP:1||ELECTRICALCONDUCTIVITY:1||ELECTROCATALYSTS:1||ELECTROCHEMICAL FORMATION:1||ELECTRODE:1||ELECTROLYTES:1||ELECTROMIGRATION:1||ENZYME:1||EPITAXIAL ELECTRODEPOSITION:1||EPITAXY:1||Electric current:1||Electrical characterization:1||Electrical properties.:1||Electrical resistance:1||Electrical transport:1||Electrocatalyst:1||Electrochemical Polishing:1||Electrochemical deposition:1||Electrochemical etching:1||Electrochemical quartz crystal microbalance:1||Electrodeposition NiCo alloy:1||Electrodepostion:1||Electroless Deposition:1||Electrolytic temperature:1||Electronic materials:1||Electrophoretic deposition:1||Electroplating:1||Electropolymerization:1||Epitaxial growth:1||Ethylenediamine:1||Extracellular matrix (ECM):1||FECO ALLOY:1||FILM:1||FPM structure:1||Fe, P doping:1||Fe3O4 Nanoparticle:1||FePd nanowire:1||FePd thin films:1||Flexible sensor:1||GALVANIC DISPLACEMENT:1||GAPS:1||Gas Sensors:1||Gas sensor:1||Gold:1||H2Te generation:1||HER catalyst:1||HIGHASPECTRATIO:1||HYDROGEN EVOLUTION REACTION:1||Hardness:1||Humidity:1||Humidity sensor:1||Hydrazine:1||Hydrogen:1||Hydrogen annealing:1||Hydrogen evolution reaction:1||Impedance test:1||Indium chloride bath:1||Injectable cell delivery:1||Inkjet printing:1||Intermetallic compounds:1||Inverted pyramid:1||Kinetic spray:1||L1(0) phase:1||LAYERED DOUBLE HYDROXIDE:1||LEADTELLURIDE:1||LIGHTEMITTINGDIODES:1||LITHIUM ION BATTERIES:1||Laser Scribing:1||Liposome Complexes:1||Lithium carbonate:1||Localization:1||Low pH:1||Low reflectance:1||MACROPORE FORMATION:1||MAGNETICPROPERTIES:1||MAXIMUM STRENGTH:1||MECHANISM:1||MEMORIES:1||MEMORY:1||MEMS:1||MESOSCALE METAL PARTICLES:1||METAL NANOWIRES:1||METALLIZATION:1||MODULES:1||MRI (Magnetic Resonance Imaging) Contrast Agents:1||MaCE:1||Mace process:1||Magnetic property:1||Maskless:1||Microbump:1||Micropatterning:1||Micropillar arrays:1||Microcoil:1||Microcontact printing:1||Minority carrier:1||Morphology control:1||Multiwall Carbon Nanotubes:1||NTYPE:1||NTYPE SILICON:1||NANOSCALE:1||NANOSENSORS:1||NANOSTRUCTURED MATERIALS:1||NANOTUBES:1||NANOWIRE BUILDINGBLOCKS:1||NH4F:1||NI:1||NO2 Gas:1||NO2 sensors:1||Nanocrystal:1||Nanopillar array:1||Nanoplatelet:1||Nanoribbon:1||Nanosheet:1||Nanostructure design:1||Nanostructures:1||Nanotexturing:1||Nanotubes:1||Nanotwin copper film:1||Nanotwinned Cu:1||Nanotwins:1||Nanowires:1||Ni:1||NiFe alloy:1||NiW alloy:1||NiAg:1||NiFe:1||NiOx:1||NiWP coating:1||Nickel chloride activation:1||Nickel nanocone:1||Nickel oxide:1||OCP:1||ORGANIC ADDITIVES:1||OXIDASE:1||OXIDATION:1||Optimization:1||Overburden:1||Oxygen evolution reaction:1||PTYPE SILICON:1||PARTICLES:1||PEO:1||PEROXIDASE:1||PHASE:1||PHOSPHIDE:1||PHOTOCATALYTIC ACTIVITY:1||PHOTODETECTORS:1||PHOTOELECTROCHEMICAL CELLS:1||PHYSICS:1||PLATINUM NANOPARTICLES:1||POROUS SILICON:1||PORPHYRIN:1||PULSE ELECTRODEPOSITION:1||Pd nanofilm:1||Peltier:1||Peptide:1||Permalloy:1||Phase boundary engineering:1||Photonic devices:1||Photovoltaic:1||Piezoelectric:1||Plasma:1||Polyaniline:1||Polymer inks:1||Porous silicon nitride:1||Postetching:1||Potassium permanganate:1||Powders:1||Printing:1||Process variables:1||Pt:1||Pulse Electrodeposition:1||Pulsereverse current:1||RC member:1||REAR CONTACTS:1||RESISTANCE:1||Recycling:1||Reducing agent:1||Reduction:1||Reproducibility:1||Rh aqua/chlorocomplex:1||Rh electrodeposition:1||Roasting:1||Ru:1||Ruthenium:1||Ruthenium nanoparticles:1||S passivation:1||SAM:1||SAM(alkanethiol):1||SCHOTTKY DIODES:1||SE ATOMIC LAYERS:1||SELFASSEMBLED MONOLAYERS:1||SEM:1||SEMICONDUCTOR NANOWIRES:1||SI:1||SI(100):1||SILICIDES:1||SILICON:1||SILICON NANOWIRES:1||SILICON SOLARCELLS:1||SINGLECRYSTALS:1||SIZESELECTIVE ELECTRODEPOSITION:1||SOLARCELL:1||STABILITY:1||STACKING:1||STAMPS:1||STORAGE DEVICES:1||STRESS:1||STS 304:1||SUPERLATTICE STRUCTURES:1||SURFACE PASSIVATION:1||SURFACEENERGY:1||SYSTEM:1||Sample temperature:1||Scanning electron microscopy:1||Schottky barriers:1||Schottky diodes:1||Seebeck:1||Selective Cu deposition:1||Selective Cu electrodeposition:1||Selective filling:1||Selective leaching:1||Selective lithium leaching:1||Selfactivation:1||Selfannealing:1||Semiconductivity:1||Si photocathode:1||Si photocathodes:1||Si photovoltaics:1||Siliconsilicon oxideindium tin oxide:1||Silver nanoparticle:1||Single Ni nanowire:1||Sintering:1||Sn plating:1||Solar cells:1||Solution stability:1||Sonication:1||Spalling:1||Spark plasma sintering:1||Spent coffee grounds:1||Spontaneously deposition:1||Spray deposition:1||Strain energy:1||Strength:1||Stress:1||Stress relaxation:1||Superfilling:1||Surface Treatment:1||Surface energy:1||Surface roughness:1||Surfaceenhanced Raman scattering:1||Surfaces:1||Surfactant etc.:1||THERMALPROPERTIES:1||THERMOELECTRIC PROPERTIES:1||TRANSISTORS:1||TWINS:1||Taguchi method:1||Te nanowire:1||Tellurium electrodeposition:1||Thermal alloying:1||Thermal reliability:1||Thermoelectric effects:1||Thermoelectric films:1||Thermoelectric material:1||Thermoelectric materials:1||Thin Film Si:1||Thin Film Solar Cell:1||Thin film:1||Thin films:1||Threedimensional (3D) metal/cuprous oxide:1||Threedimensional integration:1||Through glass via:1||TiO2:1||TiO2 nanotubes:1||Tissue engineering:1||Titanium:1||Transmission electron microscopy:1||Trench Filling:1||Twin Boundary:1||ULTRAHIGHSTRENGTH:1||UV–vis spectroscopy:1||Vanadium:1||ViaHole Lining:1||Voidfree filling:1||Voidfree film:1||Voltageapplied atomic force microscopy:1||WATER REDUCTION:1||Waste electric vehicle cell powder:1||Water splitting:1||Wires:1||Working voltage:1||ZINC SELENIDE:1||ZNO:1||Zirconia:1||ZnO electrodeposition:1||ZnO thin films:1||ZnTe Nanodots:1||Zr compounds:1||additives:1||advanced semiconductor:1||anodized aluminum oxide (AAO):1||aquachloro complexes of Ru:1||arrays:1||backgated fieldeffecttransistors:1||biocompatibility:1||bipolar plates for PEMFC:1||black Si:1||carrier filtering effect:1||catalysis:1||cathode active materials:1||chloride ingress:1||choline chloride:1||compositional control:1||coordination polymer particles:1||copper:1||copper telluride:1||corrosion monitoring:1||corrosion resistance:1||cover depth:1||current overlapped area:1||deep eutectic:1||defect healing:1||defects:1||diffusion:1||drug delivery:1||ectrodeposition:1||edge slope:1||electrochemical:1||electrochemical deposition:1||electrodeposition on insulators:1||electroless plating:1||electroplating package:1||electroplating speed:1||electropolishing:1||elemental semiconductors:1||energy storage:1||ferromagnetic nanowires:1||fieldeffect passivation:1||galvanostatic electroplating deposition:1||gold nanoparticles:1||hardness:1||heterojunction:1||high current density:1||hybrid bonding:1||interaction between additives:1||interface energetics:1||internal stress:1||ionic liquid:1||kerf loss:1||leakage currents:1||local magnetic field:1||low temperature:1||magnetic assembly:1||magnetic properties:1||magnetic thin films:1||metalloporphyrin:1||microfabrication:1||microwave:1||morphological transformation:1||multilayer:1||multilayered structure:1||nano trench filling:1||nanoindentation:1||nanotrench filling:1||nanofragmentamorphous MOF:1||nanohardness:1||nanotwins:1||nickel:1||nickeltungsten alloy:1||noise suppressor:1||nozzle fluid dynamics:1||oxygen evolution reaction:1||ptype SbxTey:1||passivation layer:1||phosphorous:1||photoelectrochemical cells:1||photocatalytic degradation:1||photoelectrochemical cells:1||postannealing:1||potassium permanganate:1||preannealing:1||pulse current:1||rectification:1||reduced graphene oxide:1||roasting:1||scanning electrochemical microscopy:1||seed layer:1||selective lithium leaching:1||semiconductor growth:1||silicon:1||sizedependent band gap:1||sodium stannate:1||solar cell:1||spalling:1||stressor layer:1||superlattice thin films:1||suppression:1||surface modification:1||tellurium chemical reaction:1||thermal extrusion:1||thin Si layer:1||threedimensional additive printing process:1||throughsiliconvia (TSV):1||ultrathin silicon wafer:1||vanadium:1||water acceptor:1||zinc telluride:1||선택적 리튬침출:1||열처리:1||재활용:1||µCP:1||폐전기차 셀 분말:1||(BI,SB)(2)TE3:1||(NH4)(2)S:1||3D printing:1||ACTIVATION:1||AGGREGATION:1||AL2O3 COATINGS:1||ALLOYS:1||AMORPHOUSSILICON:1||ANODIC ALUMINA TEMPLATES:1||ANTISTICTION:1||AQUEOUSSOLUTION:1||ARRAYS:1||AU(100):1||AU(111):1||AZ91 Mg alloy:1||Activator:1||Active nickelbased catalyst:1||Adatom surface diffusion:1||Additive manufacturing:1||Additives:1||Adiposederived stem cell (ASC):1||Adjust the dband centers:1||Ag interdiffusion:1||Ag nano layer:1||Alkaline conditions:1||Aluminum Alloy:1||Amorphous:1||Anion transfer rates:1||Annealing process:1||Anodic aluminum oxide:1||Anodization:1||Anodized alumina:1||Anodized aluminum oxide:1||Anodizing:1||BI2TE3 THINFILMS:1||Backcontact:1||Ballmilling:1||Bath Temperature:1||Bifunctional Catalyst:1||Bifunctional electrocatalysts:1||Bismuth antimony telluride:1||Blocking layer:1||Bluetooth:1||CARBON NANOTUBES:1||CARRIER CONCENTRATION:1||CATALYTICACTIVITY:1||CDTE NANOWIRES:1||CHARGETRANSPORT:1||CHEMICALVAPORDEPOSITION:1||CHLORIDE BATHS:1||CITRICACID:1||CMOS:1||CNT NETWORKS:1||CO poisoning:1||COBALT:1||COFE ALLOYS:1||COMPLEXES:1||CONSTRUCTION:1||CONTACTS:1||COPPER:1||CORROSION:1||CRYSTALS:1||CTE mismatch:1||CU(IN,GA)SE2:1||CU2O NANOCRYSTALS:1||CU2O SOLARCELLS:1||CUO:1||CUPROUSOXIDE:1||Carbon:1||Carbon Nanotube:1||Carbon catalyst:1||Carbothermic reaction:1||

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