ScholarWorks@Hanyang University ERICA Campus: Kang, Bo Soo

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Kang, Bo Soo (강보수)

COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)

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Tel 031-400-5483
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MEMORY:8||Resistance switching:7||FILMS:6||THINFILMS:6||PZT:5||NANOFILAMENTS:4||Dielectric breakdown:3||MODEL:3||Ferroelectric:3||MEMORIES:3||resistance switching:3||retention:3||NIO FILMS:2||RESISTANCE:2||NONVOLATILE MEMORY:2||Unipolar resistance switching:2||Wakeup effect:2||Resistance randomaccess memory:2||Resistance randomaccess memory (RRAM):2||Resistive switching:2||NiO thin film:2||Nickel oxide:2||INTERFACES:2||GROWTH:2||OXIDEFILMS:2||ferroelectric:2||Impedance spectroscopy:2||DEPOSITION:2||HIGHDENSITY:2||DEPENDENCE:2||PERMITTIVITY:2||HfO2:2||PHOTOLUMINESCENCE:2||POLARIZATION:2||memory:2||FATIGUE:2||FERROELECTRIC PROPERTIES:2||LAALO3:2||Fatigue:2||Econophysics:2||Heterojunction:1||Highk:1||IGZO:1||IMPEDANCE SPECTROSCOPY:1||IMPROVEMENT:1||INJECTION:1||INTERFACE:1||IRO2:1||Imprint:1||Intraday returns:1||Investor type:1||Ir:1||IrO2:1||KOSPI 200 index futures:1||KOSPI200 futures:1||LAYER:1||LEAKAGE CURRENT:1||LOWCOST:1||LOWTEMPERATURE:1||Lacloped bismuth titanate:1||LaAlO3:1||MEMORY APPLICATIONS:1||METALINSULATORTRANSITION:1||MGO:1||MICROSCOPY:1||MICROSTRUCTURE:1||MIT:1||MOCVD:1||MRAM:1||Memristor:1||Metalsemiconductorsemiconductor structure:1||NANOSCALE:1||NETWORKS:1||Negative capacitance:1||Nonvolatile memory:1||OPTICALPROPERTIES:1||ORIENTATION:1||OXIDEMEDIATED EPITAXY:1||OXIDES:1||Order size:1||Oxide:1||Oxygen vacancy:1||PB(ZR,TI)O3 THINFILMS:1||PHOTOCATALYTIC ACTIVITY:1||POLARIZATION RETENTION:1||PULSEDLASER DEPOSITION:1||Pb content:1||Phase transition measure:1||Phaseshifting behaviour:1||Polarization switching dynamics:1||Polarizationelectric field curve:1||Pt:1||REACTIVE DEPOSITION:1||RESISTIVE MEMORY:1||RRAM:1||Retention:1||SI(001):1||SI(100) SUBSTRATE:1||SILICIDATION:1||SILICON:1||SRTIO3:1||STABILITY:1||STRESS:1||SUBSTRATE:1||SWITCH:1||SYSTEM:1||Set process:1||Si doped HfO2:1||SrBi2Ta2O9(SBT):1||Switching dynamics:1||TEMPERATURE:1||TEMPLATES:1||THINFILM CAPACITORS:1||TIO2 FILMS:1||TITANATE:1||TITANIA:1||TRANSITIONMETAL OXIDES:1||TRANSPARENT:1||TaOx:1||TaOx:1||TaucLorentz:1||Thin film:1||UNIPOLAR:1||Wakeup:1||ZNO:1||aSi:1||activation field:1||amorphous state:1||annealing:1||carbon nanotubes:1||conductance modulation:1||crossbar architecture:1||depolarization:1||diode:1||energy efficiency:1||ferroelectric thin film:1||ferroelectric transistor:1||grain orientation:1||hydrogeninduced degradation:1||imprint:1||interface:1||learning accuracy:1||linearity:1||low reading current:1||nanocomposites:1||nanodevices:1||nanotechnology:1||neuromorphic computing:1||noble metal:1||nonvolatile memory:1||onetime fieldprogrammable (OTP) memory:1||oxide:1||oxide diode:1||oxide electrode:1||oxygen control:1||oxygen vacancy:1||polarization relaxation:1||polarization switching:1||relaxation:1||remanent polarization:1||resistive switching:1||ruthenium compounds:1||selfdiffusion:1||short operation time:1||sneak path problem:1||soft breakdown:1||solutionbased:1||surface diffusion:1||switching power:1||symmetry:1||thermogravimetric analysis:1||thin film:1||thin films:1||2DEG:1||titanium dioxide:1||Al2O3:1||Annealing:1||Antifuse:1||BARIUM STRONTIUMTITANATE:1||BI4XLAXTI3O12:1||BI4TI3O12:1||BISMUTH TITANATE:1||BLT:1||BREAKDOWN:1||BUFFER LAYER:1||BaTiO3:1||CV, IV:1||CAPACITORS:1||CHEMICALVAPORDEPOSITION:1||COATED CONDUCTORS:1||COBALT:1||CONVERSION:1||CRYSTAL:1||CRYSTALLIZATION:1||CURRENTVOLTAGE CHARACTERISTICS:1||Coercive voltage:1||Crosspoint:1||Currentbiased set process:1||DEADLAYER:1||DEVICE:1||DOPED SRTIO3:1||Diffusion:1||Diffusion barrier:1||EFFICIENCY:1||ELECTRICALPROPERTIES:1||ELECTRODE:1||ELECTRODES:1||EMISSION:1||Electrode:1||Ellipsometry:1||FABRICATION:1||FeRAM:1||HIGHSPEED:1||HYDROGENINDUCED DEGRADATION:1||

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