ScholarWorks@Hanyang University ERICA Campus: Kang, Bo Soo

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Kang, Bo Soo (강보수)

COLLEGE OF ADVANCED TECHNOLOGY AND CONVERGENCE (MAJOR IN INTELLIGENCE INFORMATION AND QUANTUM TECHNOLOGY)

Research Area: 고체물리학실험

Tel 031-400-5483
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MEMORY:8||Resistance switching:7||NANOFILAMENTS:4||Ferroelectric:4||FILMS:3||Dielectric breakdown:3||MODEL:3||Resistive switching:3||resistance switching:3||THINFILMS:3||NiO thin film:2||Nickel oxide:2||Synaptic device:2||Fatigue:2||Resistance randomaccess memory:2||Resistance randomaccess memory (RRAM):2||Impedance spectroscopy:2||Unipolar resistance switching:2||HfO2:2||Wakeup effect:2||PZT:2||Econophysics:2||Neuromorphic:2||Heterojunction:1||Highk:1||Hygroscopic oxide:1||IGZO:1||IMPEDANCE SPECTROSCOPY:1||IMPROVEMENT:1||Imprint:1||Intraday returns:1||Investor type:1||KOSPI 200 index futures:1||KOSPI200 futures:1||LAYER:1||LEAKAGE CURRENT:1||LaAlO3:1||Large memory window:1||Lowcurrent operation:1||MEMORIES:1||MIFM capacitor:1||MIT:1||Memristor:1||Metalsemiconductorsemiconductor structure:1||NETWORKS:1||NONVOLATILE MEMORY:1||Negative capacitance:1||Nonvolatile memory:1||OPTICALPROPERTIES:1||OXIDEMEDIATED EPITAXY:1||Order size:1||Oxide:1||Oxygen vacancy:1||PHOTOLUMINESCENCE:1||PULSEDLASER DEPOSITION:1||Pb content:1||Phase transition measure:1||Phaseshifting behaviour:1||Polarization switching dynamics:1||Polarizationelectric field curve:1||REACTIVE DEPOSITION:1||RESISTANCE:1||RESISTIVE MEMORY:1||RRAM:1||Retention:1||SI(001):1||SI(100) SUBSTRATE:1||SILICIDATION:1||SILICON:1||STABILITY:1||SYSTEM:1||Set process:1||Si doped HfO2:1||SrBi2Ta2O9(SBT):1||Switching dynamics:1||TRANSITIONMETAL OXIDES:1||Ta2O5/HfO2 bilayer:1||TaOx:1||TaOx:1||TaucLorentz:1||Thin film:1||ThinFilm transistor (TFT):1||UNIPOLAR:1||Wakeup:1||aSi:1||activation field:1||antiferroelectricity:1||atomic layer deposition:1||crossbar architecture:1||diode:1||electrostatic capacitor:1||energy efficiency:1||energy landscape:1||energy storage devices:1||ferroelectric:1||first order reversal curves:1||grain orientation:1||hafnium oxide:1||landau theory:1||linearity:1||low reading current:1||memory:1||modified supercycle:1||nanodevices:1||nonvolatile memory:1||oxide:1||oxygen control:1||oxygen vacancy:1||remanent polarization:1||resistive switching:1||short operation time:1||sneak path problem:1||soft breakdown:1||solutionbased:1||split up:1||switching mechanism:1||switching power:1||symmetry:1||2DEG:1||titanium dioxide:1||Al2O3:1||Aldoped ZrO2:1||Analog switching:1||Annealing:1||BREAKDOWN:1||BUFFER LAYER:1||BaTiO3:1||CHEMICALVAPORDEPOSITION:1||COBALT:1||Coercive voltage:1||Conductivebridging random access memory (CBRAM):1||Crosspoint:1||Currentbiased set process:1||DEVICE:1||Diffusion:1||Diffusion barrier:1||EMISSION:1||Electrode:1||Ellipsometry:1||GROWTH:1||HIGHDENSITY:1||Hafnium zirconium oxide (HZO):1||

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