ScholarWorks@Hanyang University ERICA Campus: Park, Tae Joo

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Park, Tae Joo (박태주)

ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)

Research Area: 반도체 소자/소재, Semiconductor device/material

Tel 031-400-5223
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Atomic layer deposition:24||atomic layer deposition:18||Photocatalysis:10||ZnO:9||ALD:8||TiO2:7||SiO2:6||Xray absorption spectroscopy:6||QDSSCs:5||rGO:4||HfO2:4||Nanocomposites:4||SILAR:4||Photocatalyst:4||Al2O3:4||2D electron gas:3||Si diffusion:3||GaN:3||Atomic layer deposited:3||ZnS:3||Graphitic carbon nitride:3||H2S:3||Nanocomposite:3||pSILAR:3||annealing:3||SnO2:3||ruthenium:3||CdS:3||Quantumdots:3||Optical limiting:3||gC3N4:3||thin film:3||Dye degradation:3||Interfacial layer:3||MoS2:2||PRECURSOR:2||atomiclayerdeposition:2||black Si:2||Coreshell:2||photoelectrochemical cells:2||porous materials:2||Atomic layer deposition (ALD):2||Electrochemical sensor:2||Impurity:2||GATE DIELECTRICS:2||HF:2||Amperometric biosensor:2||Low temperature process:2||hafnium compounds:2||Sulfur passivation:2||hydrogen evolution reaction:2||Hafnium oxide:2||Interfacial recombination barrier:2||twodimensional electron gas:2||silicon:2||InP:2||AlGaN:2||Heterojunction:2||OXIDES:2||RhB:2||heterojunction:2||Thermal evaporation:2||Rhodamine B:2||Thermoelectric materials:2||Heterojunction Photocatalyst:2||fieldeffect passivation:2||Doping:2||TiN:2||La2O3:2||Lactate detection:2||ALD HfO2:2||Visible light active photocatalyst:2||Ag2O:2||Highk gate dielectrics:2||Silicates:2||highk dielectric thin films:2||oxide heterostructure:2||Bi2Te3:2||aluminum oxide:2||Oxidation:2||ozone:2||hydrogen:2||titanium oxide:2||Equivalent oxide thickness:2||Epitaxial layer:1||Epitaxy:1||Erioglaucine:1||Ferroelectric thin films:1||Formaldehyde:1||FowlerNordheim (FN) tunneling:1||GOLD NANOPARTICLES:1||GROWTHMECHANISM:1||Gallium arsenide:1||Grain boundary engineering:1||H2S annealing:1||H2STreatment:1||HCHO gas sensor:1||HFO2 FILMS:1||Halfcycle treatments:1||HepG2:1||Heterojunction solar cells:1||Hfsilicate:1||Hf1xZrxO2:1||HfO2 film:1||HfO2 films:1||Hierarchical:1||High temperature:1||Highk:1||Highk dielectrics:1||Highkappa dielectrics:1||Humidity sensor:1||Hydrogen evolution:1||Hydrothermal:1||ICP:1||IIIV:1||IMPROVEMENT:1||INSITU:1||Impurities in:1||In situ XPS:1||Insitu:1||Insitu XPS:1||Insitu defect passivation:1||InP MOSFETs:1||Indium gallium arsenide:1||Indium sulfide:1||Inherent substratedependent selectivity:1||Interface:1||Interface layer:1||Interface state:1||Interface/surface modification:1||Interfacial reactions:1||KAPPA GATE DIELECTRICS:1||KCl:1||LANTHANUM OXIDE:1||LARGESCALE SYNTHESIS:1||LIMITING PROPERTIES:1||La formamidinate precursors:1||LaHfOx nanolaminate films:1||Lanthanum metal gate:1||Lattice matching:1||Lead sulfide:1||Leakage current:1||Leakage currents:1||Light scattering:1||Localized surface plasmon resonance:1||Low Temperature Process:1||Low temperature:1||Low temperature oxidation:1||MEMORY:1||MIM devices:1||MIS device:1||MOS:1||MOSFETs:1||MWCNTs:1||Mace process:1||Macroporous:1||Memristive device:1||Metal oxide heterojunction:1||Metal oxide heterostructure:1||Metal oxide nanoparticles:1||Metal thin film:1||Metalinsulatorsemiconductor capacitor:1||Methylene Blue:1||Microscopy:1||Mixed alkylamidocyclopentadienyl zirconium precursor:1||MoS2:1||Monoclinic structures:1||Morphology:1||Multilayered architectures:1||N de ethylation:1||Ntype Bi2Te2.7Se0.3 (BTS):1||NANOCLUSTERS:1||NANOCRYSTALS:1||NONEQUILIBRIUM ELECTRON:1||NONVOLATILE MEMORY:1||Nanostructured oxide materials:1||Nanostructures:1||NbN:1||Nickel hydroxide:1||Nickel oxide:1||Nitric acid oxidation:1||Nitric acid oxidation of silicon:1||Nitrided:1||Nonenzymatic biosensor:1||Nonlinear absorption:1||Nonlinear optical properties:1||OER:1||Orders of magnitude:1||Outdiffusion:1||Oxidants:1||Oxide semiconductor:1||Oxygen defect:1||Oxygen sources:1||Ozone:1||Ozone concentration:1||PARAMETERS:1||PASSIVATION:1||PHOTOCATALYST:1||PLASMA:1||PbS:1||Photoactive gas sensor:1||Photoactive gas sensors:1||Photoanode:1||Photocatalysts:1||Photoelectricity:1||Photons:1||Photothermal:1||Physisorption:1||PlasmaEnhanced Atomic Layer Deposition:1||Porous Hierarchical NiO:1||Porous heterostructure:1||Porous nickel oxide:1||Porous silicon nitride:1||Porous structure:1||Post deposition annealing:1||Postdeposition annealing:1||Precursors:1||Pure water:1||QDSC:1||Quantum dots:1||Quantum dots loading:1||RESISTANCE:1||ROOMTEMPERATURE:1||RRAM:1||Resistive switching memory:1||RhB degradation:1||Ru:1||Rutile:1||S passivation:1||SI:1||SILICON NANOWIRES:1||SIZE:1||SOLUTIONPHASE APPROACH:1||STABILITY:1||STACKS:1||Schottky barrier:1||Schottky barrier diode:1||Schottky diode:1||Schottkytype diodes:1||Selfcleaning effects:1||Selflimiting growth:1||Semic:1||Separation:1||Si photocathode:1||Si photovoltaics:1||Si solar cell:1||Si substrates:1||SiC:1||SiON:1||Silicate formation:1||Silicate phase:1||Silicon:1||Sn(dmamp)(2):1||Sn2+ doping:1||SnO2TiO2:1||SnS2:1||Sputtering:1||SrTiO3:1||Steric hindrance:1||Strontium alloys:1||Sulfur Passivation:1||Sulfur annealing:1||Surface chemistry:1||Surface passivation & recombination barrier layer:1||Surface plasmon resonance:1||Synthesis:1||TELLURIUM NANOBELTS:1||THINFILMS:1||TRANSISTORS:1||TRANSPORT:1||TRIGONAL SELENIUM:1||Thermal budget:1||Thermal stability:1||Thinfilm photocatalyst:1||Thorn ball shaped nanostructures:1||TiO2:1||Titanate:1||Titanium dioxide:1||Titanium precursor:1||Toxic:1||Transmission electron microscopy:1||Trimethyl aluminum:1||Trimethylaluminum:1||UNIFORM NANOWIRES:1||UV:1||UV protection:1||Ultrafast laser excitation:1||VAPORDEPOSITION:1||VAPORDEPOSITION ROUTE:1||VISIBLELIGHT:1||Vaporphase inhibitor:1||Vis spectroscopy:1||Visible light:1||Visible light active:1||Visible light photocatalyst:1||X ray photoelectron spectroscopy:1||XPS:1||ZRO2:1||Zinc oxide:1||Zinc sulfide:1||ZnS by ALD technique:1||ZnTiO3:1||ZrO2:1||aluminium compounds:1||amorphous MoSx:1||annealing carbonate:1||antireflective nanostructuring:1||breakdown voltage:1||catalysts:1||chemical interdiffusion:1||conductive bridge random access memory:1||coreshell structure:1||coreshell structures:1||crossbar:1||crossbar arrays:1||dd excitation:1||defects:1||dielectric thin films:1||discrete feeding method:1||dyes:1||effective oxide charge density:1||effective work function:1||electric breakdown:1||electrodes:1||electronphonon coupling:1||electronic structure:1||elemental semiconductors:1||etching:1||field effect passivation:1||fieldeffect transistor:1||freestanding 2D layers:1||gC3N4:1||gas sensor:1||gate leakage current:1||germanium (Ge):1||growth rate:1||hafnium oxide (HfO2):1||highk dielectric:1||highk dielectrics:1||highk gate dielectric:1||highk gate dielectrics:1||highk layers:1||hydrogen evolution:1||hysteresis:1||impurities:1||indium compounds:1||interface:1||interface energetics:1||interface states:1||interfaces:1||interfacial passivation layer:1||low temperature process:1||metal gate:1||microelectronics:1||multistacked channel:1||multilayered photoanode:1||multiple threshold voltage:1||ntype:1||nanoparticles:1||nanosheets:1||nanostructured Si solar cells:1||nitridation:1||nucleation:1||oxidation:1||oxide heterostructures:1||oxygen ratio:1||oxygen source:1||ptype:1||passivation layer:1||permittivity:1||photocatalysis:1||photocatalyst:1||photochemistry:1||photoelectrochemical cell:1||porous tin dioxide:1||precursor:1||quantum clusters:1||resistivity:1||resonant inelastic Xray scattering:1||rotary ALD:1||ruthenium oxide:1||scavenging effect:1||seeding layers:1||selection device:1||selective dissolution:1||silver:1||sneak current:1||sputter deposition:1||sputtering:1||stainless steel:1||strontium compounds:1||sulfur oxidation:1||sulfur passivation:1||synchrotron Xray photoelectron spectroscopy:1||ternary logic transistor:1||tetragonal:1||thermal evaporation deposition:1||thermoelectric:1||thermoelectric materials:1||thermoelectrics:1||thin film capacitors:1||thinfilm transistors (TFTs):1||titanium dioxide:1||transmissionline method (TLM):1||transparency:1||tunnel barrier engineering:1||unipolar resistive switching:1||van der Waals interaction:1||water:1||work function:1||TiO2:1||work function modulation:1||(NH4)(2)S:1||2DEG:1||AG NANOPARTICLES:1||ALDetch supercycle:1||ALDetching supercycle:1||AMORPHOUSSEMICONDUCTORS:1||ATOMIC LAYER DEPOSITION:1||AU:1||Adsorption:1||Ag2S:1||Ag2S:1||Alkaline conditions:1||Alumina:1||Aluminum:1||Aminodisilane precursor:1||Amorphous indiumgalliumzincoxide (aIGZO):1||Anatase:1||Annealing:1||Antibacterial activity:1||Antimicrobial activity:1||Areaselective atomic layer deposition:1||Areaselective atomic layer deposition (ASALD):1||B. subtilis:1||BET:1||Bacteria:1||Bandengineered:1||Bi2Te3:1||Bimetallic alloy nanoparticles:1||Binding energy:1||Buffer layers:1||CV:1||CAPACITORS:1||CARBON NANOTUBES:1||CFD modeling:1||CNT:1||CRYSTALLINE SELENIUM:1||CRYSTALLIZATION:1||CZTSSe:1||Cadmium sulfide:1||Capacitance density:1||Carbon fi:1||Carbon monoxide:1||Carrier concentration:1||Catalysis:1||Charge traps:1||Chemical structure:1||Chemical synthesis:1||Clean water:1||Coating:1||Composites:1||Composition:1||Concentration of:1||Congo red:1||Coreshell structure:1||Counter electrode:1||Cr(VI) reduction:1||Crystalline materials:1||Crystallinities:1||Crystallinity:1||CuS center dot PbS:1||Cyclopentadienyl precursor:1||DIPAS:1||DRAM capacitor:1||Defects:1||Densification:1||Dielectric constant:1||Dielectric properties:1||Dielectrics:1||Diffusion in solids:1||Discrete feeding method (DFM):1||Doping (additives):1||Dyedegradation:1||E coli:1||E. coli:1||ELECTRICALPROPERTIES:1||ELECTRONICSTRUCTURE:1||EXTRACTION:1||Effective activation energy:1||Efficiency:1||Electrical property:1||Enhanced selectivity:1||Enlarged deposition selectivity:1||Environmental remediation:1||

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