ScholarWorks@Hanyang University ERICA Campus: Kim, Woo Hee

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Kim, Woo Hee (김우희)

COLLEGE OF ADVANCED TECHNOLOGY AND CONVERGENCE (ERICA 신소재·반도체공학전공)

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Tel 031-400-5271
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Areaselective atomic layer deposition:9||Atomic layer deposition:6||atomic layer deposition:6||Ruthenium:4||Surface modification:3||areaselective atomic layer deposition:3||Atomic layer etching:2||atomic layer etching:2||Vaporphase inhibitor:2||Silicon oxide:2||Small molecule inhibitor:2||ALDetch supercycle:2||Aminosilane inhibitor:2||Growth retardation:2||selective removal:2||selfassembled monolayer:2||Chemical vapor deposition:2||Chemical vapor transport:1||Chemoselective adsorption:1||Computational chemistry:1||Crystallinity:1||Dielectric constant:1||Discrete feeding method (DFM):1||Dry etching:1||Electrocatalysts:1||Enhanced selectivity:1||Enlarged deposition selectivity:1||Epitaxial SBT film:1||Etching mechanism:1||Ferroelectricity:1||Film thickness:1||Flexoelectricity:1||Gate oxide:1||Halide precursor:1||Heterostructure:1||Hexafluoroacetylacetone:1||Hf1xZrxO2 thin films:1||Hfbased gate dielectrics:1||Highk:1||Highk oxides:1||IGZO TFT:1||Inherent selectivity:1||Inherent substratedependent selectivity:1||Interfacial heat transport:1||Interfacial layer:1||Interfacial thermal conductance:1||Lacapping layer:1||Leakage current:1||MOS capacitors:1||Metal:1||Metal–insulator transition:1||Metal passivation:1||MetalInsulatorMetal:1||MoS2 monolayer:1||MoS2/graphene:1||Nanofibers:1||Nitride passivation:1||Nitrideblocking capability:1||O2/Ar plasma:1||Oxide semiconductor:1||Oxygen evolution reaction:1||PFM:1||Phosphonic acid:1||Phosphonic acid SAMs:1||Physisorption:1||Piezoelectricity:1||Precursor:1||Pt:1||RGO heater:1||Rare earth:1||Rhenium oxides:1||Rhenium sulfides:1||Ru ALD:1||RuO2:1||Ruthenium nanofilm:1||Selective removal:1||Selfassembled monolayer:1||Silane selfassembled monolayer:1||SnO:1||SnO2:1||Stoichiometry:1||Surface chemistry:1||Surface corrugation:1||Tin oxide:1||Titanium nitride:1||Ultrafast terahertz spectroscopy:1||Y2O3:1||Yttrium:1||Zirconium oxide:1||ZnOdecorated MoS2 nanosheets:1||ZnOdecorated MoS2 nanowires:1||acetylacetone:1||aldehyde inhibitor:1||aminosilane precursor:1||angströmlevel control:1||areaselective ALD:1||atomic layer deposition (ALD):1||atomic level processing:1||conductingfilament:1||defect recovery:1||density functional theory:1||dielectric selectivity:1||discrete feeding method:1||domainwall motion:1||effective work function:1||enhanced growth rates:1||enlarged deposition selectivity:1||exposure:1||ferroelectric response:1||gas sensors:1||heterostructures:1||high κ:1||highenergy electron temperature:1||highkdielectrics:1||hollow cathode plasma:1||hybrid nanostructure:1||increased plasma density:1||inherent substratedependent selectivity:1||iridium:1||iridium oxide:1||low temperature film growth:1||molybdenum disulfides:1||morphology control in MoS:1||nanopattern:1||nucleation:1||oxidation state:1||oxide thin films:1||ozone:1||passivation:1||phosphonic acid:1||photovoltaics:1||pulsed metalorganic chemical vapor deposition:1||reduced graphene oxide:1||resistive switching:1||resistivity:1||ruthenium:1||selfhealing polymer:1||selfpowered sensors:1||surface hydroxyl group:1||surface roughness control:1||thin films:1||transition metal dichalcogenide:1||transition metal dichalcogenides:1||ultrathin metal film:1||vaporphaseinhibitor:1||(2) thin films:1||work function:1||2D MoS2:1||4+oxidation states:1||ALD:1||ALDetching supercycle:1||ASALD:1||Al2O3:1||Aldehyde:1||Aldehyde inhibitor:1||Alkanethiol:1||Aminodisilane precursor:1||Antiferroelectric:1||Areaselective atomic layer deposition (ASALD):1||Blocking capability:1||C. Fatigue:1||C. Ferroelectric properties:1||Catalytic dissociation:1||

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