ScholarWorks@Hanyang University ERICA Campus: Kim, Woo Hee

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Kim, Woo Hee (김우희)

ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)

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Tel 031-400-5271
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Atomic layer deposition:8||atomic layer deposition:7||Areaselective atomic layer deposition:5||Ruthenium:4||PFM:3||Piezoelectricity:3||Ferroelectricity:3||selfassembled monolayer:2||Activation energy:2||P(VDFTrFE) thin film:2||Chemical vapor deposition:2||Aminosilane inhibitor:2||Surface modification:2||Al2O3:2||C. Fatigue:1||C. Ferroelectric properties:1||CAFM:1||Catalytic dissociation:1||CeO 2 /HfO 2:1||Chemoselective adsorption:1||Color coating:1||Computational chemistry:1||Crystallinity:1||Crystallization temperature:1||DPN:1||Dielectric constant:1||Discrete feeding method (DFM):1||Domain wall speed:1||Dry etching:1||Electrocatalysts:1||Enhanced selectivity:1||Enlarged deposition selectivity:1||Epitaxial SBT film:1||Ferroelectric domain size:1||Ferroelectric properties:1||Ferroelectric thin films:1||Film thickness:1||Flexoelectricity:1||Gate dielectric:1||Gate oxide:1||Ge substrate:1||Growth retardation:1||Halide precursor:1||Heated AFM:1||Heterostructure:1||Hf1xZrxO2 thin films:1||Hfbased gate dielectrics:1||Highk:1||IGZO TFT:1||ITO substrate:1||Inherent selectivity:1||Inherent substratedependent selectivity:1||Interfacial heat transport:1||Interfacial layer:1||Interfacial thermal conductance:1||Lacapping layer:1||Leakage current:1||MOS capacitors:1||Metal:1||Metal–insulator transition:1||MetalInsulatorMetal:1||Mndoped ZnO nanowire:1||MoS2 monolayer:1||MoS2/graphene:1||Nanofibers:1||Needlelike structure:1||Nitrideblocking capability:1||O2/Ar plasma:1||Oxide semiconductor:1||Oxygen evolution reaction:1||Phosphonic acid SAMs:1||Physisorption:1||Precursor:1||Pt:1||Pt substrate:1||Pulsed laser deposition:1||RGO heater:1||RT ferromagnetism:1||Rare earth:1||Resistive switching:1||Rhenium oxides:1||Rhenium sulfides:1||Ru ALD:1||RuO2:1||Ruthenium nanofilm:1||SnO:1||SnO2:1||Step edge decoration method:1||Stoichiometry:1||Surface chemistry:1||Surface corrugation:1||TiO2:1||TiO2/Al2O3 multilayer:1||Tin oxide:1||Titanium nitride:1||Ultrafast terahertz spectroscopy:1||Vaporphase inhibitor:1||Y2O3:1||Yttrium:1||Zirconium oxide:1||ZnOdecorated MoS2 nanosheets:1||ZnOdecorated MoS2 nanowires:1||aldehyde inhibitor:1||areaselective ALD:1||areaselective atomic layer deposition:1||areaselective deposition:1||conductingfilament:1||defect recovery:1||dielectric selectivity:1||discrete feeding method:1||domainwall motion:1||effective work function:1||enhanced growth rates:1||ferroelectric domain wall energy:1||ferroelectric polarization:1||ferroelectric response:1||gas sensors:1||geometric selectivity:1||heterostructures:1||high κ:1||highenergy electron temperature:1||hybrid nanostructure:1||increased plasma density:1||ion implantation:1||low temperature film growth:1||molybdenum disulfides:1||morphology control in MoS:1||nanopattern:1||nucleation:1||oxide thin films:1||ozone:1||passivation:1||photovoltaics:1||piezoelectric force microscopy:1||pulsed laser deposition:1||pulsed metalorganic chemical vapor deposition:1||reduced graphene oxide:1||resistive switching:1||resistivity:1||ruthenium:1||selfhealing polymer:1||selfpowered sensors:1||thin films:1||transition metal dichalcogenide:1||transition metal dichalcogenides:1||(2) thin films:1||work function:1||2D MoS2:1||3D nanostructure:1||ALD:1||ALDetch supercycle:1||ALDetching supercycle:1||ASALD:1||Aldehyde inhibitor:1||Aminodisilane precursor:1||Antiferroelectric:1||Areaselective atomic layer deposition (ASALD):1||Atomic layer etching:1||BiFeO3 nanodot:1||Blocking capability:1||

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