ScholarWorks@Hanyang University ERICA Campus: Ahn, Ji Hoon

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Ahn, Ji Hoon (안지훈)

ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)

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Tel 031-400-5220
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Atomic layer deposition:12||atomic layer deposition:6||2D materials:4||MoS2:4||neuromorphic computing:3||MIM capacitor:3||Thin films:3||Crystallinity:3||DRAM capacitor:3||Plasmaenhanced atomic layer deposition:3||Hafnium oxide:2||Perovskite:2||Deposition:2||Supercycle:2||Hf1xZrxO2:2||C: Thin films:2||Dielectric constant:2||Thin film:2||Thinfilm silicon solar cell:2||FTJ:2||Dielectrics:2||synaptic devices:2||Chemical vapor deposition:2||Leakage current:2||Transparent conductive electrode:2||SrRuO3:2||Crystal structure:2||Capacitors:1||Carbon impurity:1||Carrier lifetime:1||Charge doping:1||Charge transfer:1||Cl impurity:1||Composite materials:1||Composition:1||Copper microspheres:1||Crystal growth:1||Crystal orientation:1||Crystal structure modulation:1||Crystallinity engineering:1||Cyclopentadienyl precursor:1||D. Dielectric properties:1||D: Electrical property:1||D: Water permeation property:1||DRAM capacitor electrodes:1||Deactivation:1||Density functional theory:1||Densityfunctional theory:1||Depletion effect:1||Dielectric:1||Dielectric properties:1||Doping technique:1||Dynamic randomaccess memory capacitor:1||EOT scaling:1||Electrical conductivity:1||Electrocatalysts:1||Electrode material:1||Energy harvesting:1||Energy storage device:1||Exciton:1||Ferroelectric thin films:1||Formation energy:1||Graingrowth:1||Graphene oxide:1||Growth mechanism:1||H2:1||Hardness:1||HfO:1||HfZrO 2 thin films:1||HfxZr1xO2 thin films:1||Highk Dielectrics:1||Highk dielectrics:1||Interfacial segregation:1||Iron alloys:1||Magnetic properties:1||Membrane:1||Membrane technology:1||Microholes:1||Mixedsource HVPE:1||MoS2 growth mechanisms:1||Modulus:1||Multifunctional thin films:1||NH3 flow rate:1||Nanofibers:1||Novel precursor:1||O2 plasma:1||Optical phonon:1||Oxide–metal–oxide:1||Oxide/metal/oxide:1||Oxygen vacancy:1||Oxygendoped silver:1||PTFE:1||Passivation layer:1||Phase transition:1||Phosphorus:1||Photoluminescence:1||Photovoltaic:1||PlasmaEnhanced Atomic Layer Deposition:1||Platinum group metals:1||Polysilicon:1||Postdeposition annealing:1||Preferred Orientation:1||Purification:1||RF Magnetron Sputtering:1||RF magnetron Sputtering:1||RF 마그네트론 스퍼터링:1||Raman spectroscopy:1||Rapid thermal annealing:1||Reducing agent:1||Resistance random access memory:1||Resistivity:1||Rhenium oxides:1||Rhenium sulfides:1||Rutile structure:1||SNN:1||STDP:1||Salt rejection:1||Secondary growth:1||Semitransparent solar cell:1||Separation:1||Si:1||SnCl4 precursor:1||SnO2 thin films:1||SnS2:1||Solgel process:1||Strain:1||Strontium niobate:1||Strontium ruthenate:1||Sulfurization:1||Surface energy (anisotropy):1||Surface evolution:1||Ta2O5:1||Thermal inkjet printer:1||TiO<sub>2</sub>:1||TiO2:1||Tin dioxide:1||Tin sulfide compounds:1||Titanium dioxide:1||Titanium oxynitride:1||Transition metal dichalcogenide:1||Transitionmetal dichalcogenide:1||Transparent:1||Transparent Conductive Oxide:1||Transparent solar cell:1||Triboelectric nanogenerator:1||Twodimensional material:1||Twodimensional nanomaterial:1||Water desalination:1||Wetchemical etching:1||Zirconium oxide:1||Zr 1x Hf x O 2 thin films:1||ZrO2:1||chemical sensing devices:1||conductance modulation:1||crystalline phase:1||dielectric:1||dielectrics:1||discrete feeding method:1||dopedoxide:1||endurance test:1||ferroelectric:1||ferroelectric capacitors:1||ferroelectric transistor:1||ferroelectricity:1||field effect transistors:1||heterostructures:1||hexagonal transitionmetal dichalcogenides:1||interface treatment:1||learning accuracy:1||lowtemperature film growth:1||metal chalcogenide:1||molybdenum disulfide:1||molybdenum disulfides:1||molybdenum precursor:1||monolayer semiconductors:1||nanosheets:1||nucleation:1||plasmaenhanced atomic layer deposition:1||polarization switching:1||polymorphism:1||precursor chemisorption kinetics:1||resistivity:1||ruthenium:1||superlattice:1||superlattices:1||thin film:1||thin film growth modes:1||thin films:1||tin disulfides:1||tin monosulfides:1||transitionmetal dichalcogenides:1||twodimensional materials:1||van der Waals epitaxy:1||van der Waals layered materials:1||vapor transport synthesis:1||vertical growth:1||work function:1||yttrium:1||zinc oxide:1||마이크로 구리 구슬:1||박막:1||스트론튬 루세네이트:1||투명 전극:1||페로브스케이트:1||(2):1||혼합 소스 수소 화물 기상법:1||(SrRuO3):1||2Dimensional materials:1||2차 성장:1||A. Oxides:1||A. Thin flims:1||A: Plasmaenhanced atomic layer deposition:1||A: Silicon oxide:1||ALD:1||ALD TiN:1||Al Distribution:1||Al mixed materials:1||AlDoped HfO2:1||AlN 혼합물질:1||Aligned transfer:1||Aluminium doping:1||Aluminum oxide:1||Annealing conditions:1||Antiferroelectricity:1||B. Vapor deposition:1||B: High working pressure plasmaenhanced chemical vapor deposition:1||B: Niobium oxide:1||Bi2Te3:1||Bifacial:1||Buffer:1||Buildingintegrated photovoltaic:1||Capacitor electrode:1||

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