ScholarWorks@Hanyang University ERICA Campus: EO, YUNG SEON

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EO, YUNG SEON (어영선)

ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)

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Tel 031-400-5295
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signal integrity:16||transmission line:12||signal transient:9||crosstalk:8||Sparameters:6||Eyediagram:6||transmission lines:5||interconnect:5||signal delay:4||Transmission line:4||interconnect lines:4||jitter:3||multicoupled transmission lines:3||simultaneous switching noise:3||Electric lines:3||delay:3||sparameter:3||scattering parameters:3||Interconnect lines:3||전송선:3||Circuit model:3||traveling wave:2||inductance effect:2||interconnects:2||VLSI interconnect:2||circuit model:2||VLSI interconnects:2||resonance:2||SAW resonator:2||silicon substrate:2||Crosstalk:2||Discontinuity:2||TWA:2||eyediagram:2||shielding effect:2||package:2||system pole:2||Signal Integrity:2||Scattering parameters:2||Sparameter:2||시그널 인테그러티:2||InGaAsP:1||Input patterns:1||Interconnect modeling:1||MOSFET:1||Mixed organic materials:1||Modelbased simulations:1||Modulated SAW IDTs:1||On chip interconnect:1||On chips:1||Optimization:1||Organic substrate:1||Permittivity:1||Piezoelectric material:1||Power distribution net:1||Programmable logic controllers:1||Quality assurance:1||Quality factor:1||RC intercomnects:1||RLC transmission line:1||RLGC:1||Radiation loss:1||Resonance:1||Resonance effect:1||S파라메터:1||S파라미터:1||SAW equivalent circuit model:1||SAW filter:1||SAW interdigital transducers:1||SAW velocity:1||SPICE simulations:1||Signal integrity:1||Skin effect:1||Software engineering:1||Structure:1||Surface acoustic waves:1||Tansmission Lines:1||Temperature coefficient of frequency:1||Test circuit:1||Transmission line parameters:1||Transmission line theory:1||VLSI circuits:1||Verification method:1||Via:1||Waveguide:1||Worst case:1||analytical model:1||angled facet:1||asymmetric property:1||capacitance:1||complex permittivity:1||contact:1||crosstalk noise:1||deembedding:1||deembedding:1||detuning:1||distributedmodel:1||effectivecapacitance:1||effectiveresistance:1||electron temperature:1||facet reflectivity:1||frequency variant circuit model:1||frequencyvariant characteristics:1||glitch:1||ground bounce:1||ground plane:1||highfrequency measurement:1||hot carrier:1||inductance:1||integrated circuits:1||intersymbol interference (ISI):1||intersymbolinterference:1||interconnect capacitance:1||intersymbol interference (ISI):1||laser diode:1||losscoupled DFB:1||lowpower synchronization:1||lumpedmodel:1||measurements:1||modal analysis:1||modal decoupling technique:1||modeling:1||multilayer:1||multilayer:1||multilayer package:1||nonuniform:1||ohmic contact:1||onchip decoupling capacitor:1||optical waveguide:1||organic material:1||pInP:1||partial plane model:1||photon emission:1||power consumption:1||power distribution net:1||power plane:1||preemphasis circuit:1||propagation constant:1||proximity effect:1||ringing:1||sparameters:1||scattering parameter:1||semiconductor optical amplifier:1||signal  integrity:1||signal integriy:1||signal transient response:1||signalintegrity:1||simulation:1||skin effect:1||sourcesynchronization:1||spatial holeburning:1||spotsize converter:1||spotsizeconverter:1||substrate effect:1||switching:1||switching pattern:1||timing uncertainty:1||transmission line (TL):1||transmission line (TL) modeling:1||transmission spectrum:1||travelingwave:1||travelingwavebased waveform approximation (TWA):1||very large scale integrated (VLSI) circuits:1||very large scale integration (VLSI) interconnects:1||via:1||vias:1||wavelength locker:1||wavelengthdivision multiplexing:1||window:1||고주파:1||고주파 효과:1||공진:1||모드 분석:1||신호 천이:1||측정:1||크로스톡:1||1.3mu m uncooled laser:1||회로모델:1||Acoustic wave modulation:1||Area savings:1||Asymmetrical IDT structure:1||Au/Cr/AuZn/Au/pInP:1||Au/Pt/Zn/Pd/pInP:1||BGA Package:1||Ball grid array (BGA) package:1||Bit patterns:1||Bit rates:1||CMOS:1||Characteristic impedance:1||Circuit models:1||Circuit simulation:1||Complex permittivity:1||Computer simulation:1||Conductive loss:1||Coplanar:1||Coplanar structure:1||Coplanar wave:1||Coupled lines:1||Coupled transmission lines:1||Crosstalk effect:1||Deembedding:1||Dielectric loss:1||Differential signaling:1||Eigen modes:1||Electromechanical coupling coefficient:1||Electrothermal model:1||Eye diagram:1||FabryPerot filter:1||Fedoped BH:1||Finite size:1||Frequency variant circuit model:1||Fundamental modes:1||Gaussianbeam:1||Ground signal grounds:1||Ground structure:1||Highspeed signals:1||IC interconnects:1||IC package:1||

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