ScholarWorks@Hanyang University ERICA Campus: Shim, Jong In

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Shim, Jong In (심종인)

ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)

Research Area: 반도체 광자응용공학

Tel 031-400-5179
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GaN:10||Lightemitting diodes:9||lightemitting diodes:9||piezoelectric field:6||photocurrent:6||internal quantum efficiency:5||InGaN:5||defects:5||signal integrity:4||lightemitting diodes (LEDs):4||efficiency droop:4||Quantum well:4||Internal quantum efficiency:4||lightemitting diode:4||electroreflectance:4||AlGaN:4||transmission line:4||delay:3||LEDS:3||signal delay:3||crosstalk:3||ideality factor:3||optical loss:3||Lightemitting diode:3||electroabsorption modulator (EAM):3||GAN:3||wide band gap semiconductors:2||strain:2||opencircuit voltage:2||INTENSITY:2||Strain:2||system pole:2||EFFICIENCY:2||VLSI interconnect:2||carrier distribution:2||VLSI interconnects:2||Patterned sapphire substrate:2||GaNbased laser:2||radiative current:2||GaN on Si:2||IIIV semiconductors:2||gallium compounds:2||characterization:2||traveling wave:2||flatband voltage:2||Droop:2||secondharmonic generation (SHG):2||Quantum wells:2||point defects:2||LED:2||vertical LED:2||verticalcavity lasers:2||CURRENTS:2||potential fluctuation:2||Circuit modeling:2||saturation:2||Organic lightemitting diodes:2||Light emitting diode (LED):2||signal transient:2||nonradiative current:2||degradation:2||InGaN/GaN MOW Growth:1||JUNCTIONTEMPERATURE:1||LEDs:1||LIFETIMES:1||LIGHT EMITTING DIODES:1||Light emitting diode:1||Light emitting diodes:1||Light extraction efficiency:1||Lightemitting Diode:1||Lightemitting diode (LED):1||Low power consumption:1||MOCVD:1||MODEL:1||Metal decoration:1||Mg:1||Mg diffusion:1||MicroLED:1||Nearultraviolet lightemitting diodes:1||OPTICALPROPERTIES:1||Optical devices:1||Optical polarization:1||PNJUNCTIONS:1||PIEZOELECTRIC FIELD:1||POLARIZATION:1||Photoconductivity:1||Photocurrent spectroscopy:1||Piezoelectric field:1||Polarization field:1||Power generation:1||Qcheck system:1||QUANTUM EFFICIENCY:1||QUANTUMWELL LASERS:1||QUANTUMWELLS:1||QW pair:1||Quantum well devices:1||RECOMBINATION:1||RECOMBINATION DYNAMICS:1||Radiative recombination rate:1||Ray tracing:1||Realtime detection:1||Reliability:1||Resonant tunneling diode:1||Resonant tunneling diodes:1||Ripple:1||Sparameter:1||SEMICONDUCTOR MATERIALS:1||SILICO:1||Saturation:1||Semiconductor device packaging:1||Shockley equation:1||Simulation:1||Stokes shift:1||Strain relaxation:1||Stress relaxation:1||Surface texturing:1||THRESHOLD:1||TLM:1||Temperature measurement:1||Thermal properties:1||Timeresolved photoluminescence:1||Transient:1||Transmission coefficient:1||Transmitter optical subassemble (TOSA):1||Vpit:1||VERTICAL CHIP:1||Voltage measurement:1||Waveguide layer:1||absorption:1||activation:1||alphafactor:1||analog optical link:1||analog systems:1||angled facet:1||bending:1||benzocyclobutene:1||birefringence:1||blue laser:1||breakdown voltage:1||carrier localization:1||carrier spillover:1||carrier transport processes:1||cathodoluminescence:1||circuit model:1||circuit modeling:1||current crowding:1||current spreading:1||degradation mechanism:1||detuning:1||diode equation:1||diodes:1||dislocation:1||distributed feedback laser diode (DFBLD):1||efficiency:1||electroabsorption:1||electroabsorption (EA):1||electroabsorption modulator:1||electrochemical potentiostatic activation:1||electroluminescence:1||electron blocking layer (EBL):1||electronhole recombination:1||electrostatic discharge (ESD):1||epiwafer:1||equivalent circuits:1||external cavity lasers:1||external quantum efficiency:1||facet reflectivity:1||finitedifference timedomain (FDTD) method:1||forward voltage:1||gainbandwidth product:1||gallium nitride:1||glitch:1||green semiconductor laser:1||ground plane:1||high power laser:1||highpower laser:1||hole concentration:1||impedance:1||impedance spectroscopy:1||indium composition:1||indium compounds:1||industrial mass production:1||injection efficiency:1||interconnect:1||interconnect capacitance:1||intermodulation distortion:1||joint density of states:1||junction temperature:1||laser diode (LD):1||light emitting diode:1||light emitting diodes:1||light extraction efficiency:1||lightemitting diode (LED):1||linewidth enhancement factor:1||link gain:1||losscoupled DFB:1||low temperature:1||lozenge:1||mesasidewall:1||metrology:1||microLEDs:1||modal analysis:1||modulation spectroscopy:1||modulation transfer functions:1||modulators:1||multilayer:1||multilayer package:1||multiple quantum well:1||multiple quantum wells (MQWs):1||nonlinear coupling:1||nonlinearity:1||nonlocal model:1||nonradiative recombination:1||ohmic contact:1||optical fiber communication:1||optical gain:1||optical injection locking:1||optical links:1||optical processes:1||optoelectronic devices:1||organic lightemitting diodes:1||pGaN:1||pInP:1||partial plane model:1||photodetectors:1||photoluminescence:1||photonic crystal:1||polarization:1||potential drop:1||power conversion efficiency:1||power plane:1||quantum well:1||rate equation:1||recombination rate:1||reference point:1||refractive index:1||resonant photoluminescence:1||ringing:1||roundtrip loss:1||sparameter:1||saturation of radiative recombination rate:1||screening:1||semiconductor FP laser:1||semiconductor device packaging:1||semiconductor epitaxial layers:1||semiconductor optical amplifier:1||shaping:1||shielding effect:1||signal integriy:1||silicon substrate:1||simultaneous switching noise:1||single quantum well (QW):1||space–chargelimited photocurrents:1||spacechargelimitedcurrent:1||spotsizeconverter:1||spuriousfree dynamic range (SFDR):1||strain relaxation:1||stress:1||switching pattern:1||temperature:1||temperature distribution:1||temperaturedependent electroluminescence (TDEL):1||termsabsorption process:1||threading dislocations (TDs):1||timing uncertainty:1||transfer curve:1||transmission electron microscopy:1||transmission spectrum:1||transmitter optical subassembly (TOSA):1||traveling wave (TW):1||travelingwave:1||travelingwavebased waveform approximation (TWA):1||typeII quantum wells:1||ultraviolet:1||variablerange hopping (VRH):1||very large scale integrated (VLSI) circuits:1||very large scale integration (VLSI) interconnects:1||wavelength locker:1||wavelengthdivision multiplexing:1||window:1||공명 터넬 다이오드:1||양자우물:1||(In)GaN:1||투과계수:1||1.3mu m uncooled laser:1||10 Gb/s small form factor pluggable (XFP):1||10Gb/ssmallformfactor pluggable (XFP):1||71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CURRENT DENSITY:1||75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY:1||APD:1||Antimony Surfactant Effect:1||Au/Cr/AuZn/Au/pInP:1||Au/Pt/Zn/Pd/pInP:1||Auger effect:1||BANDSTRUCTURES:1||BLUE:1||Blueshift:1||CH4/H2RIE:1||Capacitance:1||Capacitancevoltage characteristics:1||Carrier lifetime:1||Characterization:1||Charge recombination and transport:1||Chip shaping:1||Current spreading:1||DBR laser:1||DEPENDENCE:1||DEVICES:1||DFB laser:1||DISTRIBUTIONS:1||Degradation:1||Distributed feedback laser diode (DFBLD):1||Dot emission:1||ELECTRODE PATTERN DESIGN:1||ELECTROLUMINESCENCE:1||ELECTROREFLECTANCE:1||EMISSION:1||EPITAXY:1||EXCITON:1||Efficiency droop:1||Electrical properties:1||Electroluminescence:1||Electroreflectance:1||Electroreflectance spectroscopy:1||Extraction efficiency:1||FFP ripples:1||FILMS:1||FabryPerot filter:1||Far field pattern:1||Fedoped BH:1||GREEN:1||GaInAsP/InP:1||GaNbased LED:1||GaNSb:1||Gas sensor array:1||Gaussianbeam:1||Ghost mode:1||Goodman and Rose theory:1||IC package:1||IIInitride optoelectronic semiconductors:1||Inrich area:1||InGaAsP:1||InGaN materials:1||InGaN quantum wells:1||

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