ScholarWorks@Hanyang University ERICA Campus: Park, Jin Goo

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Park, Jin Goo (박진구)

COLLEGE OF ADVANCED TECHNOLOGY AND CONVERGENCE (MAJOR IN ADVANCED MATERIALS AND SEMICONDUCTOR ENGINEERING)

Research Area: 반도체/전자재료 세정, 연마, (Bio-)MEMS

Tel 031-400-5226
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CMP:17||Particle removal:12||Megasonic cleaning:8||Post CMP cleaning:8||PVA brush:6||Chemical mechanical planarization (CMP):5||postCMP cleaning:5||particle removal:5||Cleaning:5||EUVL:4||AFM:4||Brush scrubbing:4||Etch rate:4||PostCMP cleaning:4||Benzotriazole:4||Cu CMP:4||Friction:4||Fixed abrasive pad:4||Particle removal efficiency:4||Megasonic:4||Pellicle:4||Aluminum:3||Laser shock wave cleaning:3||W CMP:3||EUV mask:3||MEMS:3||Copper:3||Removal rate:3||Corrosion:3||Corrosion inhibition:3||adhesion force:3||Oxide CMP:3||Diamond:3||Electrochemical impedance spectroscopy:3||Scratch:3||Metallization:3||Pad debris:3||Pad recovery:3||Ceria:3||BTA:3||Pattern damage:3||Lapping:3||Antistiction layer:3||Nanoimprinting:3||Conditioning:3||Brush loading:3||hydrogen peroxide:3||Cavitation:3||Contact angle:3||Shallow trench isolation:2||Pad conditioning:2||chemical mechanical planarization:2||chemical mechanical polishing:2||Tungsten CMP:2||citric acid:2||Footprint:2||Microarray:2||Particle adhesion:2||contact angles:2||post CMP cleaning:2||Microelectronics  Semiconductor Processing:2||Ru CMP:2||nanoparticles:2||copper:2||Chemical mechanical planarization:2||Particle removal efficiency (PRE):2||Orbital polishing:2||removal rate:2||Contamination:2||defects:2||Acoustic cavitation:2||Tungsten slurry:2||Erosion:2||AFM/LFM:2||Al (aluminum):2||Pattern collapse:2||hot embossing:2||Dishing:2||Surface roughness:2||Surfactant:2||Surfactants:2||TEOS removal rate:2||Potentiodynamic Polarization:2||CuBTA complex:2||Conditioning Disk:2||Dissolved gas:2||EUV lithography:2||CMP (Chemical Mechanical Polishing):2||Cobalt:2||InGaAs:2||Noble metal CMP:2||surface cleaning:2||wafer cleaning:2||Breakin process:2||Acidic colloidal slurry:2||oxide slurry:2||Corrosion inhibitor:2||Electrochemical Impedance Spectroscopy:2||Dual diffuser lithography:2||High selectivity:2||Adhesion force:2||Sapphire:2||PRE:2||injection molding:2||Hot Embossing:2||SC1:2||particle removal efficiency:2||Density functional theory:2||CAN:2||Hot embossing:2||fluorinated carbon (FC) film:2||DIW spray:1||DNA Sensor:1||DOE (design of experiment):1||DRAM pattern:1||DSP+ solutions:1||Damage mechanism:1||Defect detection:1||Defectivity:1||Defects:1||Deflection:1||Deformation:1||Density function theory:1||Diamond CVD technology:1||Diamond conditioner:1||Diamond conditioner disk:1||Diamond crystal size:1||Diamond density:1||Diamond particles:1||Diamond size:1||Dilute alkaline solution:1||Dilute hydrofluoric acid:1||Dishing effect:1||Dispersion:1||Dissolved oxygen:1||Double zincating:1||Doublesided lapping:1||Doublesided scrubber and spinrinse dryer:1||Dry Clean:1||Dry cleaning CO2 cryogenic:1||Dry etching:1||ECF method:1||EIS:1||ELECTRODEPOSITION:1||ELECTROLYTES:1||EUV:1||EUV Mask:1||EUV Pellicle:1||EUV mask cleaning:1||EUV mask surface:1||EUV pellicle:1||EUV surface damage:1||EUVL mask:1||Effect of power on particle removal from trenches:1||Effect of time on particle removal from trenches:1||Electrical equivalent circuit modeling:1||Electrochemical Impedance Spectroscopy (EIS):1||Electrochemical analysis:1||Electrochemical fabrication:1||Electrochemical impedance spectroscopy (EIS):1||Electroforming:1||Electrostatic chuck:1||Ellipsometiy:1||Ellipsometry:1||Elongation:1||Etching rate:1||Ethylene glycol:1||Evaporator core:1||Extreme UV:1||Extreme ultraviolet lithography:1||ExtremeUltraviolet Lithography:1||Extrinsic gettering:1||FC layer:1||FOUP:1||FVM:1||Fe precipitation on colloidal silica:1||Fe(NO3)(3):1||Fe(NO3)3:1||Fluorescence Scanner:1||Fluorescence analysis:1||Fluorine:1||Fluorocarbon:1||Fluorocarbon coating:1||Fluorocarbon films:1||Forcedistance spectroscopy:1||Fourier transform infrared spectrometer (FTIR):1||Friction force:1||Frontier molecular orbital theory:1||Gas cluster:1||Gas dissolved water:1||Germanium contents:1||Glass:1||H2O2:1||H5N1 DNA:1||HCl/H2O2 solution:1||HF last cleaning:1||HF last wet cleaning:1||HFH2O2IPA solution:1||Hardness:1||HfO2:1||High hydrophobicity:1||High temperature epoxy:1||Hot Embossing(핫 엠보싱):1||Humidity:1||Hybrid cleaning:1||Hydration:1||Hydrocarbon contaminant:1||Hydrodynamic boundary layer:1||Hydrogen Peroxide:1||Hydrophobic(소수성):1||Hydrophobic/hydrophilic pattern:1||Hydroxyl radicals:1||IIIV materials:1||IPA:1||IPA (isopropyl alcohol):1||Immunoassay:1||Impurities:1||Indentation:1||Injection molding:1||Inkjet Printing:1||Insulation shield:1||Interfacial Layer:1||Interlevel Oxide:1||Jet spray cleaning:1||KOH:1||LFM:1||LSC:1||Langmuir adsorption:1||Lanthanum:1||Large abrasive particles ratio:1||Laser cleaning:1||Laser induced plasma shock wave:1||Lateral force:1||Line Scratch:1||Lithography:1||Lotus effect(로터스 효과):1||MIRFTIR:1||MORPHOLOGY:1||Mask:1||Mask Pattern:1||Mask defect control:1||Material loss:1||Mechanical:1||Megasonic damage:1||Megasonic process:1||Membrane:1||Meshed pellicle:1||Metal field plate:1||Metal ion contamination:1||Metal mask:1||Metal removal efficiency:1||Metalresin composite plate:1||Metalresin platen:1||Microfabrication:1||Microfluidics chip:1||Microlens:1||Microstructured surfaces:1||Microtips:1||MoO3/Au/MoO3:1||Molecular dynamic simulation:1||Molecular simulation:1||MultiStack Pellicle:1||Multiple guradring:1||Npolar GaN surface:1||N2 Purge:1||NH3/NF3 etching:1||NI:1||NaNO3:1||Nanoimprint:1||Nanoimprint lithography:1||Nanoimprint lithography (NIL):1||Nanoimprint molds:1||Nanoimprint(나노임프린트):1||Nanoimprinting lithography (NIL):1||Nanoparticle removal:1||Nanoparticle removal from trenches:1||Nanoparticle removal using megasonic:1||Nanoscale etching:1||Nanotribology:1||Nanowell Array Electrode:1||Nanowell arrays (NWA) immunosensor:1||Ni:1||Ni mold:1||Nonamine cleaning solution:1||Normal stress:1||O2 bubble:1||O2 pretreatment:1||Odor:1||Open Circuit Potential:1||Optical materials:1||Organic chelating acids:1||Organic contaminants:1||Organic removal:1||Organic residues:1||Organics removal:1||OutofBand Radiation:1||Oxidant:1||Oxide PostCMP Cleaning:1||Ozone:1||Ozone cleaning:1||Ozone supply methods:1||PBMS (particle beam mass spectrometer):1||PECVD (plasma enhanced chemical vapor deposition):1||PH:1||PMMA (polymethylmethacrylate):1||PNC:1||PVA Brush loading:1||PVA brush scrubbing:1||PVAcbrush:1||Pad Particle:1||Particle Defect:1||Particle contaminants:1||Particle size:1||Particles:1||Particulate contaminants:1||Particulate contamination:1||Passivated metals:1||Passivated surfaces:1||Passivation Layer:1||Pattern dependence:1||Pellicle deformation:1||Pencil type:1||Phosphor in glass:1||Photolithography:1||Photomask:1||Physical cleaning:1||Plasma:1||Plasma enhanced chemical vapor deposition (PECVD):1||Plasma polymerization:1||Plastic Chip:1||Plastic Chip(플라스틱 칩):1||Plastic mold:1||Plastic substrate:1||Polishing pad:1||Poly silicon CMP:1||Poly(Nisopropylacrylamide):1||Poly(acrylic acidco maleic acid) sodium salt:1||Polyethyleneimine:1||Polyvinyl acetal (PVA) brush:1||Post CMP cleaning  HF decoration:1||Post CoCMP cleaning:1||Post CuCMP:1||Post CuCMP cleaning:1||Post InGaAs CMP Cleaning:1||PostCMP:1||PostCMP Cleaning:1||PostCuCMP:1||Process queue:1||Quartz:1||RO filtration:1||Raman spectroscopy:1||Reflective index:1||Removal force:1||Residual gas:1||Resin removal:1||Roller type:1||Roughness(거칠기):1||Ruthenium:1||Ruthenium (Ru):1||Ruthenium surface:1||SAM:1||SAM(Self Assembled Monolayer):1||SELFASSEMBLED MONOLAYERS:1||SMUT:1||SNP Detection:1||SPM cleaning:1||STAMPS:1||STI CMP:1||SUS mold:1||Sapphire lapping:1||Selective surface treatment:1||Selectivity:1||Self Assembled Monolayer (SAM):1||Selfassembled monolayers:1||Selfdressing:1||Shear stress:1||Si capping layer:1||SiPIN Xray detector:1||SiGe selective etching:1||Silica abrasive:1||Silicon wafer:1||Single crystal silicon CMP:1||Single wafer cleaning:1||Singlewafer megasonic cleaner:1||Slurry formulation:1||Slurry stability:1||Sodium dodecyl sulfate (SDS):1||Stainless steel(스테인레스 스틸):1||Step height measurement:1||Stressinducedphosphoprotein1 (STIP1):1||Surface active solute:1||Surface chemistry:1||Surface morphology:1||Surface oxide layer:1||THF:1||TMAH:1||TMEMM:1||Thermal Bonding:1||Thermal aging:1||Thermal deformation:1||Thermoplastic elastomers:1||Thermosensitive hydrophobic/hydrophilic switchable surface:1||Titanium (ti) barrier layer:1||Titanium Microarray:1||Transverse sonic wave:1||Trench cleaning using megasonic:1||Triethanolamine:1||Tungsten:1||Tungsten and cobalt:1||Tungsten postCMP:1||Twobody and threebody diamond abrasion:1||UF filtration:1||UV laser cleaning:1||UVNIL:1||UVcured resin removal:1||UVimprint lithography:1||UV/O3 pretreatment:1||Ultrasonic power:1||Ultrasound:1||Uniformity:1||VSAM:1||VSAM coatings:1||Vapor self assembly monolayer (VSAM):1||W polymer removal:1||W postcmp cleaning:1||Wafer backside:1||Wafer bonding:1||Waferscale nanopatterning:1||Water mark:1||Wear rate:1||Wettability:1||White LED:1||Xray photoelectron spectroscope (XPS):1||Zeta Potential:1||Zeta potential:1||Zetapotential Reaxys Chemistry database information:1||ZrO2 nanoparticle:1||abrasives:1||acoustic cavitation:1||adsorption:1||adsorptionmechanism:1||airknife:1||alumina:1||alumina particle:1||alumina particles:1||aluminium:1||aluminum alloys:1||antistiction layer:1||antistiction layer:1||atomic force microscope (AFM):1||atomic force microscopy (AFM):1||benzotriazole (BTA):1||breakdown voltage:1||breakdown field strength:1||brush integrity:1||brush quality:1||brushinduced crosscontamination:1||cell adhesion:1||ceria particles:1||cerium compounds:1||chronoamperometry:1||computational fluid dynamics:1||conductive and transparent, switchable wettability:1||conductivity:1||contact hole clean:1||contaminations:1||damage free cleaning:1||defect density:1||defect source:1||defectfree mask:1||dewaxer:1||diamondlike carbon:1||diffuser lithography:1||digital Xray detection:1||dilute H2O2 solutions:1||dilute NH4OH solutions:1||dissolved ozone concentration:1||dry cleaning:1||dual diffuser:1||dynamic etching rate:1||electro chemical fabrication (ECF):1||electrochemical etching:1||electrochemical reaction.:1||electrokinetic effects:1||electrowetting microlens:1||etch rates:1||etching behavior:1||extreme ultraviolet pellicle:1||extremeultraviolet lithography:1||extremeultraviolet pellicle:1||final polished wafer:1||finite element simulation:1||finite volume methods:1||flat panel display:1||fluorescence:1||fluorescent particles metrology:1||fluorocarbon film:1||focused ion beam:1||friction:1||friction force:1||ground glass diffuser:1||guardring:1||halflife:1||hydrophilic:1||hydrophobic pattern fabrication:1||hydrophobic surfaces:1||incompressible NavierStokes equation:1||interaction force:1||laser shock cleaning:1||laser shock wave cleaning:1||laser shock wave cleaning (LSC):1||leakage current:1||light guide plate (LGP):1||lithography:1||lotus leaf effect:1||low k materials:1||mask cleaning:1||megasonic:1||metal line:1||metal mold:1||metal molds:1||metrology:1||micromirrors:1||microscratch:1||molybdenum:1||multistack structure:1||noble metal removal:1||nonionic surfactant:1||octafluorocyclobutane (C4F8):1||opal glass diffuser.:1||optimisation:1||optoelectronics:1||organic acids:1||organic light emitting diode (OLED):1||organic wax:1||outofband radiation:1||oxalic acid:1||ozonated DI water:1||ozonated NH4OH:1||pH:1||pH adjuster:1||pH effect:1||pH of slurry:1||pad:1||particle:1||particle adhesion:1||particle removal efficiency (PRE):1||passivation:1||pattern damage:1||pellicle:1||pellicle deformation:1||perfluoroorganic thin films:1||perfluoropolymers:1||photomask:1||planarisation:1||plasma enhanced chemical vapor deposition (PECVD):1||plastic substrate:1||polyester:1||polymer microfabrication:1||polymide:1||postCMP:1||potentiodynamic curve:1||probability:1||protein adsorption:1||regenerated slurry:1||removal efficiency:1||repulsive forces:1||ruthenium:1||scratch:1||self assembled monolayer:1||selfassembled monolayer:1||semiconductor:1||silica brushloading:1||silica particles:1||silicon compounds:1||silicon wafers:1||single photon counting sensor:1||slurries:1||slurry:1||slurry stability:1||solid content change:1||specific gravity:1||spin coating:1||stainless steel mold:1||stamp:1||stiction:1||sub100nm particle removal:1||succinic acid:1||surface:1||surface micropatterning:1||surface roughness:1||surface wettability:1||temperature:1||thin films:1||trenches:1||tribology:1||twophase flow nozzle:1||ultrasonic cleaning:1||used slurry:1||vapor deposition:1||vapourphase adsorption:1||water marks:1||wax removal.:1||wet cleaning:1||wettability:1||wrinkle and particle defect on extreme ultraviolet pellicle:1||1H,1H,2H,2Hperfluorodecyltrichlorosilane (PFS):1||zeta potential:1||3aminopropyltrimethoxysilane (APS):1||3D NAND Flash:1||3D micro structure:1||ADS surfactant:1||ALLOYS:1||ANTISTICTION:1||APM:1||ATRFTIR:1||Abrasive particles agglomeration:1||Acoustic bubble cavitation:1||Acoustic bubble growth:1||Acoustic bubble growth rate:1||Additive gases:1||Adhesion Force:1||Adsorption:1||Adsorption isotherm:1||Aerosol cleaning:1||Aging:1||Air conditioning system:1||Alkaline cleaning solution:1||Alkaline slurry:1||Alkaline solution:1||Alumina:1||Alumina particle:1||Alumina thin film:1||AmineModified Microarray:1||Amino acids:1||Ammonium halide salts:1||And defect:1||Angiogenin:1||Anionic Surfactant:1||AntiBiofouling Array Sensor:1||Antistiction:1||Antistiction films:1||Antistiction layer:1||Areaselective Atomic Layer Deposition (ASALD):1||Atomic force microscope:1||BTA removal:1||Backside cleaning:1||Breakin:1||Brittle fracture:1||Brush contamination:1||Brush skin layer:1||Bubble dynamics:1||Buffered oxide etchant (BOE):1||CD uniformity:1||CFD:1||CHLORIDE BATHS:1||CMP pad conditioner:1||CMP process:1||CO2 gas cluster:1||CVD conditioner:1||Capillary Electrophoresis:1||Capillary Electrophoresis(모세관 전기영동):1||Ce<sup>3+</sup> effect:1||CeOSi bond:1||CeOSi bonding:1||CeOSi bonding, Colloidal Ceria:1||Ceramic grooving:1||Ceria abrasive:1||Ceria abrasive contamination:1||Ceria contamination:1||Ceria removal:1||CeriaPVA bonding:1||Cesium hydroxide:1||Charge Transfer Resistance (Rct):1||Chatter Mark:1||Chatter mark:1||Chelating agents:1||Chemical Mechanical Planarization:1||Chemical Mechanical Polishing:1||Chemical cleaning:1||Chemical interaction:1||Chemical mechanical polishing:1||Chemical vapor deposition:1||Citric Acid:1||Cleaning efficiency:1||Cleaning process window:1||Cleaning techniques:1||Cluster:1||CoBTA complex:1||Co2+ ions adsorption:1||Cobaltnickel:1||Complexing Agent:1||Computational calculation:1||Condensation:1||Conditioner lifetime:1||Conditioning disk:1||Conditioning process:1||Contact angle(접촉각):1||Contact angles:1||Copper CMP:1||Copper postCMP cleaning:1||Corrosion inhibitors:1||Crosscontamination:1||Crystal defect:1||Cu CMP Slurry:1||Cu ECMP:1||Cu corrosion inhibition:1||Cu slurry chemicals:1||CuPVA interaction:1||Cu/lowk CMP:1||CuCMP:1||CuCMP slurry:1||Cupric & cuprous oxide:1||DFT calculations:1||DHF:1||DIO3 cleaning:1||DIO₃(ozonated DI water):1||DIW rinse:1||

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