Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations
DC Field | Value | Language |
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dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Eun, Hye Rim | - |
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Kang, Hee-Sung | - |
dc.contributor.author | Lee, Seong Min | - |
dc.contributor.author | Lee, Jeongmin | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Tae, Heung-Sik | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Kang, In Man | - |
dc.date.available | 2020-02-28T07:46:19Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10120 | - |
dc.description.abstract | We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (C-gd) because of the increase in the overlap capacitance (C-ov) and inversion capacitance (C-inv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (C-gg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (phi(gate)) and phi(overlap-gate) in the overlapping regions. As a result, the intrinsic delay time (tau) is greatly reduced by obtaining lower C-gg divided by the on-state current (I-on), i.e., C-gg/I-on. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.subject | OPTIMIZATION | - |
dc.subject | DESIGN | - |
dc.title | Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000365554600002 | - |
dc.identifier.doi | 10.1166/jnn.2015.11146 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.7430 - 7435 | - |
dc.identifier.scopusid | 2-s2.0-84947228996 | - |
dc.citation.endPage | 7435 | - |
dc.citation.startPage | 7430 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 15 | - |
dc.citation.number | 10 | - |
dc.contributor.affiliatedAuthor | Lee, Seong Min | - |
dc.contributor.affiliatedAuthor | Lee, Jeongmin | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Tunneling Field-Effect Transistor | - |
dc.subject.keywordAuthor | Drain-Induced Barrier Thinning | - |
dc.subject.keywordAuthor | Low-Power Performance | - |
dc.subject.keywordAuthor | Gate Capacitance | - |
dc.subject.keywordAuthor | High-Speed Switching | - |
dc.subject.keywordPlus | OPTIMIZATION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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