Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Jung, Sunghun | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-28T09:43:31Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1745-1353 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10550 | - |
dc.description.abstract | In this work, resistive switching random-access memory (RRAM) devices having a structure of metal/Si3N4/Si with different top electrode metals were fabricated to investigate the changes in switching and conduction mechanisms depending on electrode metals. It is shown that the metal workfunction is not strongly related with either high-resistance state (HRS) and forming voltage. Top electrodes (TEs) of Al, Cu, and Ni show both bipolar and unipolar switching characteristics. The changes of resistances in these devices can be explained by the different defect arrangements in the switching layer (SL). Among the devices with different TE metals, one with Ag electrode does not show unipolar switching unlike the others. The conducting filaments of Ag-electrode device in the low-resistance state (LRS) demonstrated metallic behaviors in the temperature-controlled experiments, which supports that Ag substantially participates in the conduction as a filament source. Moreover, the difference in switching speed is identified depending on TE metals. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.subject | MEMORY | - |
dc.subject | MODEL | - |
dc.title | Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000359522600009 | - |
dc.identifier.doi | 10.1587/transele.E98.C.429 | - |
dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E98C, no.5, pp.429 - 433 | - |
dc.identifier.scopusid | 2-s2.0-84929470427 | - |
dc.citation.endPage | 433 | - |
dc.citation.startPage | 429 | - |
dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.volume | E98C | - |
dc.citation.number | 5 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | switching and conduction mechanism | - |
dc.subject.keywordAuthor | top electrode (TE) | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | MODEL | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.