Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope
DC Field | Value | Language |
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dc.contributor.author | Kim, Sung Yoon | - |
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Kim, Jin Su | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Kang, In Man | - |
dc.date.available | 2020-02-28T09:43:56Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1975-0102 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10577 | - |
dc.description.abstract | Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidevvall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER SINGAPORE PTE LTD | - |
dc.relation.isPartOf | JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | - |
dc.subject | MOBILITY TRANSISTORS | - |
dc.subject | ALGAN/GAN HEMTS | - |
dc.subject | VOLTAGE | - |
dc.subject | PASSIVATION | - |
dc.subject | MECHANISM | - |
dc.title | Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000353937400048 | - |
dc.identifier.doi | 10.5370/JEET.2015.10.3.1131 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.10, no.3, pp.1131 - 1137 | - |
dc.identifier.kciid | ART001984215 | - |
dc.identifier.scopusid | 2-s2.0-84927653796 | - |
dc.citation.endPage | 1137 | - |
dc.citation.startPage | 1131 | - |
dc.citation.title | JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 3 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Gallium nitride (GaN) | - |
dc.subject.keywordAuthor | Power device | - |
dc.subject.keywordAuthor | Enhancement mode | - |
dc.subject.keywordAuthor | Vertical channel | - |
dc.subject.keywordAuthor | TCAD | - |
dc.subject.keywordPlus | MOBILITY TRANSISTORS | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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