Correlation between alkaline-earth-metal dopants and threshold voltage (V-th) stability of solution-processed gallium indium oxide thin film transistors
- Authors
- Park, Jee Ho; Yoo, Young Bum; Oh, Jin Young; Lee, Tae Il; Lee, Se Jong; Baik, Hong Koo
- Issue Date
- Jan-2015
- Publisher
- SPRINGER
- Keywords
- Solution-processed metal oxide thin film transistor; Threshold voltage stability; Partial charge model; Electron trapping times; Defect sites
- Citation
- JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, v.73, no.1, pp.260 - 264
- Journal Title
- JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
- Volume
- 73
- Number
- 1
- Start Page
- 260
- End Page
- 264
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10912
- DOI
- 10.1007/s10971-014-3560-9
- ISSN
- 0928-0707
- Abstract
- We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (V-th) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the V-th stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest V-th stability under positive gate bias and the origin of V-th stability enhancement is deduced by using the partial charge model and reaction kinetics.
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Collections - 공과대학 > 신소재공학과 > 1. Journal Articles
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