Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films
DC Field | Value | Language |
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dc.contributor.author | Das, K.C. | - |
dc.contributor.author | Ghosh, S.P. | - |
dc.contributor.author | Tripathy, N. | - |
dc.contributor.author | Bose, G. | - |
dc.contributor.author | Lee, T. | - |
dc.contributor.author | Myoung, J.M. | - |
dc.contributor.author | Kar, J.P. | - |
dc.date.available | 2020-02-28T11:41:11Z | - |
dc.date.created | 2020-02-12 | - |
dc.date.issued | 2015 | - |
dc.identifier.issn | 0094-243X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/11041 | - |
dc.description.abstract | In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C. © 2015 AIP Publishing LLC. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics Inc. | - |
dc.relation.isPartOf | AIP Conference Proceedings | - |
dc.title | Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000366586800405 | - |
dc.identifier.doi | 10.1063/1.4917978 | - |
dc.identifier.bibliographicCitation | AIP Conference Proceedings, v.1665 | - |
dc.identifier.scopusid | 2-s2.0-85063825002 | - |
dc.citation.title | AIP Conference Proceedings | - |
dc.citation.volume | 1665 | - |
dc.contributor.affiliatedAuthor | Lee, T. | - |
dc.type.docType | Proceedings Paper | - |
dc.subject.keywordAuthor | C-V | - |
dc.subject.keywordAuthor | Hafnium oxide | - |
dc.subject.keywordAuthor | High dielectrics | - |
dc.subject.keywordAuthor | I-V | - |
dc.subject.keywordAuthor | RF magnetron sputtering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scopus | - |
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