Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films
- Authors
- Das, K.C.; Ghosh, S.P.; Tripathy, N.; Bose, G.; Lee, T.; Myoung, J.M.; Kar, J.P.
- Issue Date
- 2015
- Publisher
- American Institute of Physics Inc.
- Keywords
- C-V; Hafnium oxide; High dielectrics; I-V; RF magnetron sputtering
- Citation
- AIP Conference Proceedings, v.1665
- Journal Title
- AIP Conference Proceedings
- Volume
- 1665
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/11041
- DOI
- 10.1063/1.4917978
- ISSN
- 0094-243X
- Abstract
- In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C. © 2015 AIP Publishing LLC.
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Collections - 공과대학 > 신소재공학과 > 1. Journal Articles
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