Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect
DC Field | Value | Language |
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dc.contributor.author | Yun, M. | - |
dc.contributor.author | Cho, S. | - |
dc.contributor.author | Kang, S.-K. | - |
dc.contributor.author | Jung, S. | - |
dc.contributor.author | Park, B.-G. | - |
dc.date.available | 2020-02-28T11:41:15Z | - |
dc.date.created | 2020-02-12 | - |
dc.date.issued | 2015 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/11047 | - |
dc.description.abstract | In this work, fabricated 1550-nm short-wavelength infrared (SWIR) Ge-on-Si photodetectors coupled with a Si waveguide on silicon-on-insulator (SOI) for on-chip optical interconnect as an energy-efficient green technology for next-generation very-large-scale integration (VLSI) systems are characterized. Here, a particular emphasis is put on the back-end-of-the-line (BEOL) technology in device design. Comparison study on the effects of interconnection geometry on the electrical and optical DC characteristics of the device is made. Compared with a reference device with bulk contacts, device with holey contacts demonstrated an increased optical responsivity. Further, device with holey contacts on two metal layers showed the highest photocurrent. Also, dependence of forward and reverse currents in the heterojunction pn diode on effective contact area is empirically studied. As a result, it is found that external quantum efficiency (EQE) can be significantly improved by engineering the geometry of metal interconnect in the Ge-on-Si photodetector without being affected by reduction in the effective contact area. © 2015 IEEE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | Proceedings of the International Symposium on Consumer Electronics, ISCE | - |
dc.subject | Consumer electronics | - |
dc.subject | Energy efficiency | - |
dc.subject | Environmental technology | - |
dc.subject | Germanium | - |
dc.subject | Heterojunctions | - |
dc.subject | Infrared detectors | - |
dc.subject | Infrared radiation | - |
dc.subject | Optical interconnects | - |
dc.subject | Photodetectors | - |
dc.subject | Photonic integration technology | - |
dc.subject | Photons | - |
dc.subject | Quantum efficiency | - |
dc.subject | Silicon | - |
dc.subject | VLSI circuits | - |
dc.subject | Back end of the lines | - |
dc.subject | External quantum efficiency | - |
dc.subject | Ge-on-si photodetectors | - |
dc.subject | Green technology | - |
dc.subject | On-chip optical interconnects | - |
dc.subject | P-n Diode | - |
dc.subject | Responsivity | - |
dc.subject | Short-wavelength infrared | - |
dc.subject | Silicon on insulator technology | - |
dc.title | Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.doi | 10.1109/ISCE.2015.7177834 | - |
dc.identifier.bibliographicCitation | Proceedings of the International Symposium on Consumer Electronics, ISCE, v.2015-August | - |
dc.identifier.scopusid | 2-s2.0-84953307643 | - |
dc.citation.title | Proceedings of the International Symposium on Consumer Electronics, ISCE | - |
dc.citation.volume | 2015-August | - |
dc.contributor.affiliatedAuthor | Yun, M. | - |
dc.contributor.affiliatedAuthor | Cho, S. | - |
dc.type.docType | Conference Paper | - |
dc.subject.keywordAuthor | back-end-of-the-line | - |
dc.subject.keywordAuthor | external quantum efficiency | - |
dc.subject.keywordAuthor | Ge-on-Si photodetector | - |
dc.subject.keywordAuthor | green technology | - |
dc.subject.keywordAuthor | heterojunction pn diode | - |
dc.subject.keywordAuthor | on-chip optical interconnect | - |
dc.subject.keywordAuthor | optical responsivity | - |
dc.subject.keywordAuthor | short-wavelength infrared | - |
dc.subject.keywordAuthor | silicon-on-insulator | - |
dc.subject.keywordAuthor | very-large-scale integration | - |
dc.subject.keywordPlus | Consumer electronics | - |
dc.subject.keywordPlus | Energy efficiency | - |
dc.subject.keywordPlus | Environmental technology | - |
dc.subject.keywordPlus | Germanium | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | Infrared detectors | - |
dc.subject.keywordPlus | Infrared radiation | - |
dc.subject.keywordPlus | Optical interconnects | - |
dc.subject.keywordPlus | Photodetectors | - |
dc.subject.keywordPlus | Photonic integration technology | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Quantum efficiency | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | VLSI circuits | - |
dc.subject.keywordPlus | Back end of the lines | - |
dc.subject.keywordPlus | External quantum efficiency | - |
dc.subject.keywordPlus | Ge-on-si photodetectors | - |
dc.subject.keywordPlus | Green technology | - |
dc.subject.keywordPlus | On-chip optical interconnects | - |
dc.subject.keywordPlus | P-n Diode | - |
dc.subject.keywordPlus | Responsivity | - |
dc.subject.keywordPlus | Short-wavelength infrared | - |
dc.subject.keywordPlus | Silicon on insulator technology | - |
dc.description.journalRegisteredClass | scopus | - |
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