대향 타겟 스퍼터링법으로 제작한 SiC SBD의 전기적 특성Electrical characteristics of the SiC SBD prepared by using the facing targets sputtering method
- Other Titles
- Electrical characteristics of the SiC SBD prepared by using the facing targets sputtering method
- Authors
- 이진선; 강태영; 김경환
- Issue Date
- 2015
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- Silicon carbide; Facing Targets sputtering; Schottky barrier diode; Schottky diode parameter
- Citation
- 반도체디스플레이기술학회지, v.14, no.1, pp.27 - 30
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 14
- Number
- 1
- Start Page
- 27
- End Page
- 30
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/11679
- ISSN
- 1738-2270
- Abstract
- SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.
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