Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications
DC Field | Value | Language |
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dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Kang, Hee-Sung | - |
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Kim, Young-Jo | - |
dc.contributor.author | Bae, Jin-Hyuk | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Kang, In Man | - |
dc.contributor.author | Cho, Eou-Sik | - |
dc.contributor.author | Cho, Seongjae | - |
dc.date.available | 2020-02-28T15:45:40Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12171 | - |
dc.description.abstract | We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high-k dielectric structure to overcome low current drivability. Compared to recessed-gate GaN-based MOSFETs having a single gate dielectric with the same oxide thickness, recessed-gate GaN-based MOSFETs having a dual high-k dielectric composed of Al2O3 and HfO2 have achieved a high drain current (I (D) ) and transconductance (g (m) ) due to the high dielectric constant of HfO2. Also, because the dual high-k dielectric forms a high electron density in the channel layer with outstanding gate control capability, low channel resistances (R (ch) ) have obtained. In addition, we have studied the effect of the length between the gate and the drain (L (gd) ) on the on-resistance (R (on) ) to minimize the R (on) that is associated with power consumption and switching performance. Also, the electric field distribution of a device having a dual high-k dielectric has been examined with a field plate structure for high drive voltage. The proposed device was confirmed to be a remarkable candidate for switching devices in high-power applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.subject | ALGAN/GAN HETEROSTRUCTURE | - |
dc.subject | SURFACE PASSIVATION | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | FIELD | - |
dc.subject | HEMTS | - |
dc.subject | HFO2 | - |
dc.subject | CONTACT | - |
dc.title | Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000346047000018 | - |
dc.identifier.doi | 10.3938/jkps.65.1579 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.65, no.10, pp.1579 - 1584 | - |
dc.identifier.kciid | ART001931696 | - |
dc.identifier.scopusid | 2-s2.0-84914703319 | - |
dc.citation.endPage | 1584 | - |
dc.citation.startPage | 1579 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 65 | - |
dc.citation.number | 10 | - |
dc.contributor.affiliatedAuthor | Cho, Eou-Sik | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Metal-oxide-semiconductor field-effect transistor | - |
dc.subject.keywordAuthor | Normally-off | - |
dc.subject.keywordAuthor | Recessed-gate | - |
dc.subject.keywordAuthor | High-k dielectric | - |
dc.subject.keywordPlus | ALGAN/GAN HETEROSTRUCTURE | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | CONTACT | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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