Disturbance characteristics of charge trap flash memory with tunneling field-effect transistor

Abstract

In this study, the disturbance characteristics of silicon oxide nitride oxide silicon (SONOS) memory based on the tunneling field-effect transistor; (TFET) are investigated in terms of the Fowler Nordheim (FN) program. Since the TFET SONOS memory uses a depletion channel region for; program inhibition, the tunneling of an inhibited cell considers both the electron concentration and the vertical electric field. The effects of both parameters on tunneling current are analyzed using device simulation and the tunneling current equation. The tunneling current of the source-side region depends on the electric field and that of the drain-side region depends on the electron concentration. These results can be applied to the; performance optimization of the TFET SONOS memory. (C) 2014 The Japan Society of Applied Physics