Comparison of Different Structures of Niobium Oxide Blocking Layer for Dye-Sensitized Solar Cells
- Authors
- Chun, Jae Hwan; Kim, Jong Sung
- Issue Date
- Aug-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- DSSC; Nb2O5 Blocking Layer; Photocurrent-Voltage
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.8, pp.6226 - 6230
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 8
- Start Page
- 6226
- End Page
- 6230
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12393
- DOI
- 10.1166/jnn.2014.8435
- ISSN
- 1533-4880
- Abstract
- In this study, four different types of Nb2O5 thin layers were prepared using sol-gel process to improve energy conversion efficiency of dye sensitized solar cells (DSSCs). Nb2O5 layer was prepared on the fluorine-doped tin oxide (FTO) layer, TiO2 electrode layer, and inside of TiO2 layer, respectively. The Nb2O5 layer was used to reduce the recombination of photo induced electrons and holes. The DSSCs were assembled with platinum (Pt) coated counter electrode, ruthenium dye, and iodine based electrolyte. The photocurrent-voltage (I-V) characteristics of DSSCs with different types of Nb2O5 were studied. The efficiency depends not only on the structure of DSSCs but also on the initial compositions for the preparation of Nb2O5.
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Collections - 공과대학 > 화공생명공학과 > 1. Journal Articles
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