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Comparison of Different Structures of Niobium Oxide Blocking Layer for Dye-Sensitized Solar Cells

Authors
Chun, Jae HwanKim, Jong Sung
Issue Date
Aug-2014
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
DSSC; Nb2O5 Blocking Layer; Photocurrent-Voltage
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.8, pp.6226 - 6230
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
14
Number
8
Start Page
6226
End Page
6230
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12393
DOI
10.1166/jnn.2014.8435
ISSN
1533-4880
Abstract
In this study, four different types of Nb2O5 thin layers were prepared using sol-gel process to improve energy conversion efficiency of dye sensitized solar cells (DSSCs). Nb2O5 layer was prepared on the fluorine-doped tin oxide (FTO) layer, TiO2 electrode layer, and inside of TiO2 layer, respectively. The Nb2O5 layer was used to reduce the recombination of photo induced electrons and holes. The DSSCs were assembled with platinum (Pt) coated counter electrode, ruthenium dye, and iodine based electrolyte. The photocurrent-voltage (I-V) characteristics of DSSCs with different types of Nb2O5 were studied. The efficiency depends not only on the structure of DSSCs but also on the initial compositions for the preparation of Nb2O5.
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