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Effect of deposition temperature on the formation of defect phases in BiFeO3 thin films

Authors
Jeon, Byung ChulChae, Seung ChulKang, Tae DongMoon, S. J.
Issue Date
Jun-2014
Publisher
KOREAN PHYSICAL SOC
Keywords
BiFeO3 thin film; Ferroelectric; Deposition temperature; Defect
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.12, pp.1849 - 1853
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
64
Number
12
Start Page
1849
End Page
1853
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12556
DOI
10.3938/jkps.64.1849
ISSN
0374-4884
Abstract
We report the effects of deposition temperature on the evolution of defect and second phases and on the ferroelectric properties of BiFeO3 thin films. We grew BiFeO3 thin films on (001) SrTiO3 substrates by using pulsed laser deposition at temperatures in the range of 570-600 A degrees C at intervals of 10 A degrees C. We found that defects and a resulting second phase appeared at temperatures greater than 590 A degrees C. The second phase led to significant changes in the optical absorption and to the appearance of impurity peaks in the X-ray diffraction data. An analysis of the X-ray diffraction data indicated that the second phase was Fe2O3. Atomic force microscopy measurements showed that the appearance of defects accompanied an abrupt increase in the surface roughness. Furthermore, the presence of the second phase significantly affected the ferroelectric hysteresis. Our results suggest that the evolution of defects and resulting second phase in BiFeO3 thin films depends strongly on the deposition temperature.
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