Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

Abstract

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H2O2) vapor treatment at 350 degrees C. We demonstrated that H2O and H2O2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 degrees C performed very poorly, whereas those annealed in air with H2O2 and H2O vapor at 350 degrees C exhibited significantly improved electrical performance. In particular, the H2O2-vapor-treated GIO TFTs had a mobility of 3.22 cm(2)V(-1)s(-1). We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs. (C) 2014 The Japan Society of Applied Physics