The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications
DC Field | Value | Language |
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dc.contributor.author | Seo, J.H. | - |
dc.contributor.author | Yoon, Y.J. | - |
dc.contributor.author | Lee, H.G. | - |
dc.contributor.author | Yoo, G.M. | - |
dc.contributor.author | Kim, Y.J. | - |
dc.contributor.author | Kim, S.Y. | - |
dc.contributor.author | Woo, S.Y. | - |
dc.contributor.author | Roh, H.B. | - |
dc.contributor.author | Eun, H.R. | - |
dc.contributor.author | Kang, H.S. | - |
dc.contributor.author | Cho, S. | - |
dc.contributor.author | Lee, J.-H. | - |
dc.contributor.author | Kang, I.M. | - |
dc.date.available | 2020-02-28T18:45:10Z | - |
dc.date.created | 2020-02-12 | - |
dc.date.issued | 2014 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13023 | - |
dc.description.abstract | A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The Ion of 250 mA/mm, SS of 200 mV/dec, VB of 60 V, fT of 2 GHz, and fmax of 2.5 GHz are obtained. © 2014 IEEE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE Computer Society | - |
dc.relation.isPartOf | Proceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014 | - |
dc.subject | Mechanical engineering | - |
dc.subject | Mechatronics | - |
dc.subject | Automobile applications | - |
dc.subject | Gan/algan | - |
dc.subject | Green energy | - |
dc.subject | MOS-FET | - |
dc.subject | Silicon substrates | - |
dc.subject | TCAD simulation | - |
dc.subject | MOSFET devices | - |
dc.title | The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000355260500184 | - |
dc.identifier.doi | 10.1109/ICMTMA.2014.187 | - |
dc.identifier.bibliographicCitation | Proceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, pp.762 - 765 | - |
dc.identifier.scopusid | 2-s2.0-84900393646 | - |
dc.citation.endPage | 765 | - |
dc.citation.startPage | 762 | - |
dc.citation.title | Proceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014 | - |
dc.contributor.affiliatedAuthor | Cho, S. | - |
dc.type.docType | Proceedings Paper | - |
dc.subject.keywordAuthor | Automobile application | - |
dc.subject.keywordAuthor | GaN/AlGaN | - |
dc.subject.keywordAuthor | Green energy | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | silicon substrate | - |
dc.subject.keywordAuthor | TCAD simulation | - |
dc.subject.keywordPlus | Mechanical engineering | - |
dc.subject.keywordPlus | Mechatronics | - |
dc.subject.keywordPlus | Automobile applications | - |
dc.subject.keywordPlus | Gan/algan | - |
dc.subject.keywordPlus | Green energy | - |
dc.subject.keywordPlus | MOS-FET | - |
dc.subject.keywordPlus | Silicon substrates | - |
dc.subject.keywordPlus | TCAD simulation | - |
dc.subject.keywordPlus | MOSFET devices | - |
dc.relation.journalResearchArea | Automation & Control Systems | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Automation & Control Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Engineering, Mechanical | - |
dc.description.journalRegisteredClass | scopus | - |
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