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The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications

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dc.contributor.authorSeo, J.H.-
dc.contributor.authorYoon, Y.J.-
dc.contributor.authorLee, H.G.-
dc.contributor.authorYoo, G.M.-
dc.contributor.authorKim, Y.J.-
dc.contributor.authorKim, S.Y.-
dc.contributor.authorWoo, S.Y.-
dc.contributor.authorRoh, H.B.-
dc.contributor.authorEun, H.R.-
dc.contributor.authorKang, H.S.-
dc.contributor.authorCho, S.-
dc.contributor.authorLee, J.-H.-
dc.contributor.authorKang, I.M.-
dc.date.available2020-02-28T18:45:10Z-
dc.date.created2020-02-12-
dc.date.issued2014-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13023-
dc.description.abstractA normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The Ion of 250 mA/mm, SS of 200 mV/dec, VB of 60 V, fT of 2 GHz, and fmax of 2.5 GHz are obtained. © 2014 IEEE.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE Computer Society-
dc.relation.isPartOfProceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014-
dc.subjectMechanical engineering-
dc.subjectMechatronics-
dc.subjectAutomobile applications-
dc.subjectGan/algan-
dc.subjectGreen energy-
dc.subjectMOS-FET-
dc.subjectSilicon substrates-
dc.subjectTCAD simulation-
dc.subjectMOSFET devices-
dc.titleThe simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000355260500184-
dc.identifier.doi10.1109/ICMTMA.2014.187-
dc.identifier.bibliographicCitationProceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, pp.762 - 765-
dc.identifier.scopusid2-s2.0-84900393646-
dc.citation.endPage765-
dc.citation.startPage762-
dc.citation.titleProceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014-
dc.contributor.affiliatedAuthorCho, S.-
dc.type.docTypeProceedings Paper-
dc.subject.keywordAuthorAutomobile application-
dc.subject.keywordAuthorGaN/AlGaN-
dc.subject.keywordAuthorGreen energy-
dc.subject.keywordAuthorMOSFET-
dc.subject.keywordAuthorsilicon substrate-
dc.subject.keywordAuthorTCAD simulation-
dc.subject.keywordPlusMechanical engineering-
dc.subject.keywordPlusMechatronics-
dc.subject.keywordPlusAutomobile applications-
dc.subject.keywordPlusGan/algan-
dc.subject.keywordPlusGreen energy-
dc.subject.keywordPlusMOS-FET-
dc.subject.keywordPlusSilicon substrates-
dc.subject.keywordPlusTCAD simulation-
dc.subject.keywordPlusMOSFET devices-
dc.relation.journalResearchAreaAutomation & Control Systems-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryAutomation & Control Systems-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryEngineering, Mechanical-
dc.description.journalRegisteredClassscopus-
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