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Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications

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dc.contributor.authorYoon, Y.J.-
dc.contributor.authorSeo, J.H.-
dc.contributor.authorLee, H.G.-
dc.contributor.authorYoo, G.M.-
dc.contributor.authorKim, Y.J.-
dc.contributor.authorKim, S.Y.-
dc.contributor.authorWoo, S.Y.-
dc.contributor.authorRoh, H.B.-
dc.contributor.authorEun, H.R.-
dc.contributor.authorKang, H.S.-
dc.contributor.authorCho, S.-
dc.contributor.authorCho, E.-S.-
dc.contributor.authorBae, J.-H.-
dc.contributor.authorLee, J.-H.-
dc.contributor.authorKang, I.M.-
dc.date.available2020-02-28T18:45:11Z-
dc.date.created2020-02-12-
dc.date.issued2014-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13024-
dc.description.abstractWe have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (D Drain ). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications. © 2014 IEEE.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE Computer Society-
dc.relation.isPartOfProceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014-
dc.subjectHeterojunctions-
dc.subjectRadio waves-
dc.subjectDevice simulators-
dc.subjectHeterojunction structures-
dc.subjectRadio frequencies-
dc.subjectSubthreshold swing-
dc.subjectTunneling field-effect transistors-
dc.subjectField effect transistors-
dc.titleAnalysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000355260500023-
dc.identifier.doi10.1109/ICMTMA.2014.28-
dc.identifier.bibliographicCitationProceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, pp.95 - 98-
dc.identifier.scopusid2-s2.0-84900431040-
dc.citation.endPage98-
dc.citation.startPage95-
dc.citation.titleProceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014-
dc.contributor.affiliatedAuthorCho, S.-
dc.contributor.affiliatedAuthorCho, E.-S.-
dc.type.docTypeProceedings Paper-
dc.subject.keywordAuthorCut-off Frequency-
dc.subject.keywordAuthorDevice simulator-
dc.subject.keywordAuthorHeterojunction Structure-
dc.subject.keywordAuthorRadio Frequency-
dc.subject.keywordAuthorSubthreshold swing-
dc.subject.keywordAuthorTunneling Field-Effect Transistor-
dc.subject.keywordPlusHeterojunctions-
dc.subject.keywordPlusRadio waves-
dc.subject.keywordPlusDevice simulators-
dc.subject.keywordPlusHeterojunction structures-
dc.subject.keywordPlusRadio frequencies-
dc.subject.keywordPlusSubthreshold swing-
dc.subject.keywordPlusTunneling field-effect transistors-
dc.subject.keywordPlusField effect transistors-
dc.relation.journalResearchAreaAutomation & Control Systems-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryAutomation & Control Systems-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryEngineering, Mechanical-
dc.description.journalRegisteredClassscopus-
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반도체대학 (반도체·전자공학부)
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