Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET

Abstract

In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10-12 mA/mm order). The design works have been conducted through a three-dimensional (3-D) technology computer-aided design (TCAD). © 2014 IEEE.