Effect of rapid and selective thermal processing (RSTP) assisted by microwave treatment on the properties of ultrathin Ag-layer-inserted dielectric multilayers for low-emissivity glass

Abstract

In this study, we prepared dielectric/metal/dielectric multilayers with a single inserted Ag layer for low-emissivity (low-E) coating. All layers with the intermediate Ag and dielectric layers were deposited on glass substrate by sputtering method. The deposited samples were treated by rapid and selective thermal processing (RSTP) assisted by microwave without any heating. As a result, the emissivity increases to comparable values to those from double-Ag low-E glass after RSTP treatment. The sheet resistance of treated samples decreased from 7.73 to 6.47 ohm sq(-1); however, we could not observe any of the expected changes in the Ag layer. Based on various characteristics, we believe the emissivity enhancement can be induced from the change in the electrical structure of Ag layer. Instead of increasing the number of Ag layers in low-E glass, we can increase the emissivity of low-E glass by using RSTP technique. (C) 2019 The Japan Society of Applied Physics