InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V
DC Field | Value | Language |
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dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Bae, Jin-Hyuk | - |
dc.contributor.author | Cho, Eou-Sik | - |
dc.contributor.author | Kang, In Man | - |
dc.date.available | 2020-02-28T22:43:42Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14159 | - |
dc.description.abstract | An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (I-on/I-off) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (I-on) of 421 mu A/mu m, I-on/I-off of 1.2 x 10(12) by design optimization in doping type of In0.53Ga0.47As channel at low gate (VGS) and drain voltages (V-GS) of 0.5 V. Comparable performances are maintained at V-DS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.subject | PERFORMANCE | - |
dc.title | InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000326571300033 | - |
dc.identifier.doi | 10.1016/j.cap.2013.08.013 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.13, no.9, pp.2051 - 2054 | - |
dc.identifier.kciid | ART001845208 | - |
dc.identifier.scopusid | 2-s2.0-84885086524 | - |
dc.citation.endPage | 2054 | - |
dc.citation.startPage | 2051 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 9 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.contributor.affiliatedAuthor | Cho, Eou-Sik | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Heterojunction | - |
dc.subject.keywordAuthor | Tunneling field-effect transistor | - |
dc.subject.keywordAuthor | Subthreshold swing | - |
dc.subject.keywordAuthor | Current ratio | - |
dc.subject.keywordAuthor | Low operating power | - |
dc.subject.keywordAuthor | High speed | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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