InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V

Abstract

An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (I-on/I-off) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (I-on) of 421 mu A/mu m, I-on/I-off of 1.2 x 10(12) by design optimization in doping type of In0.53Ga0.47As channel at low gate (VGS) and drain voltages (V-GS) of 0.5 V. Comparable performances are maintained at V-DS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device. (C) 2013 Elsevier B.V. All rights reserved.