Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate
DC Field | Value | Language |
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dc.contributor.author | Hyung, Gun Woo | - |
dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Wang, Jian-Xun | - |
dc.contributor.author | Lee, Ho Won | - |
dc.contributor.author | Li, Zhao-Hui | - |
dc.contributor.author | Koo, Ja-Ryong | - |
dc.contributor.author | Kwon, Sang Jik | - |
dc.contributor.author | Cho, Eou-Sik | - |
dc.contributor.author | Kim, Woo Young | - |
dc.contributor.author | Kim, Young Kwan | - |
dc.date.available | 2020-02-28T23:44:37Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2013-07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14455 | - |
dc.description.abstract | Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 degrees C. The device exhibited an on/off ratio of 1.5 x 10(6) and a high field-effect mobility of 10.2 cm(2) V-1 s(-1), which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate. (C) 2013 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.subject | TFTS | - |
dc.title | Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000321333300011 | - |
dc.identifier.doi | 10.7567/JJAP.52.071102 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.7 | - |
dc.identifier.scopusid | 2-s2.0-84880969580 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.citation.number | 7 | - |
dc.contributor.affiliatedAuthor | Wang, Jian-Xun | - |
dc.contributor.affiliatedAuthor | Li, Zhao-Hui | - |
dc.contributor.affiliatedAuthor | Kwon, Sang Jik | - |
dc.contributor.affiliatedAuthor | Cho, Eou-Sik | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TFTS | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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