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Cited 4 time in webofscience Cited 4 time in scopus
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Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric

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dc.contributor.authorHyung, Gun Woo-
dc.contributor.authorWang, Jian-Xun-
dc.contributor.authorLi, Zhao-Hui-
dc.contributor.authorKoo, Ja-Ryong-
dc.contributor.authorKwon, Sang Jik-
dc.contributor.authorCho, Eou-Sik-
dc.contributor.authorKim, Young Kwan-
dc.date.available2020-02-28T23:45:50Z-
dc.date.created2020-02-06-
dc.date.issued2013-06-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14511-
dc.description.abstractWe report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with cross-linked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 Omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum similar to 5.8 cm(2)/Vs) and on/off current ratios of similar to 10(6).-
dc.language영어-
dc.language.isoen-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.relation.isPartOfJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.subjectZINC-OXIDE-
dc.subjectPERFORMANCE-
dc.subjectFABRICATION-
dc.titleSemi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000320205400043-
dc.identifier.doi10.1166/jnn.2013.7029-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.6, pp.4052 - 4055-
dc.identifier.scopusid2-s2.0-84878718335-
dc.citation.endPage4055-
dc.citation.startPage4052-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume13-
dc.citation.number6-
dc.contributor.affiliatedAuthorKwon, Sang Jik-
dc.contributor.affiliatedAuthorCho, Eou-Sik-
dc.type.docTypeArticle-
dc.subject.keywordAuthorAmorphous InGaZnO Transistor-
dc.subject.keywordAuthorPolymeric Gate Dielectric Layer-
dc.subject.keywordAuthorFlexible Substrate-
dc.subject.keywordAuthorSemi-Transparent-
dc.subject.keywordPlusZINC-OXIDE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusFABRICATION-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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반도체대학 (반도체·전자공학부)
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