Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering
- Authors
- Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan
- Issue Date
- May-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.5
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 5
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14598
- DOI
- 10.7567/JJAP.52.05EC03
- ISSN
- 0021-4922
- Abstract
- WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4W/cm(2) and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm(-1) attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm(2)/C at an oxygen flow ratio of 0.7. (C) 2013 The Japan Society of Applied Physics
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