A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance
DC Field | Value | Language |
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dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.contributor.author | Kang, In Man | - |
dc.date.available | 2020-02-27T03:40:57Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2019-05-06 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1463 | - |
dc.description.abstract | A polycrystalline-silicon (poly-Si) dual-gate MOSFET-based one-transistor dynamic random-access memory (1T-DRAM) cell was developed using grain boundary (GB)-induced barrier effects. The program/erase operation of the 1T-DRAM is performed by trapping/detrapping charges in GB traps. The trapped charges cause variations in the grain energy barrier of the storage region, which forms the sensing margin of the 1T-DRAM. The proposed cell achieved a high sensing margin of 4.45 mu A/mu m and a long retention time (>100 ms) at a high temperature of 373 K (100 degrees C). Published under license by AIP Publishing. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | LEAKAGE CURRENT | - |
dc.subject | MECHANISM | - |
dc.subject | MOBILITY | - |
dc.title | A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000467699000025 | - |
dc.identifier.doi | 10.1063/1.5090934 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.114, no.18 | - |
dc.identifier.scopusid | 2-s2.0-85065521058 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 114 | - |
dc.citation.number | 18 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LEAKAGE CURRENT | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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