Correlation between electrical properties and point defects in NiO thin films

Abstract

The wide band-gap semiconductor NiO has p-type characteristics and is an alternative to p-ZnO, due to conduction mechanisms coming from the Ni vacancies and O interstitials. The correlation between the electrical properties and point defects was studied with NiO thin films grown by sputtering at various temperatures and in pure Ar and O-2 atmospheres. The p-type characteristics of the NiO thin films were double-checked by Hall-effect and Seebeck coefficient measurements. Below 300 A degrees C, the electrical resistivity of NiO films grown in an O-2 atmosphere was lower than those grown in an Ar atmosphere due to the suppressed point defects. On the other hand, the electrical resistivity over 300 A degrees C became semi-insulating due to the relatively stoichiometric NiO. The optical transmittance of the NiO film deposited in an O-2 atmosphere and 600 A degrees C was around 80% in the visible region. Finally, the p-NiO/n-ZnO heterojunction diodes showed a well-rectifying current-voltage curve.