Correlation between electrical properties and point defects in NiO thin films
- Authors
- Kwon, Yong Hun; Chun, Sung Hyun; Han, Jae-Hee; Cho, Hyung Koun
- Issue Date
- Dec-2012
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- oxides; seminconductors; thin films; electrical properties; defects
- Citation
- METALS AND MATERIALS INTERNATIONAL, v.18, no.6, pp.1003 - 1007
- Journal Title
- METALS AND MATERIALS INTERNATIONAL
- Volume
- 18
- Number
- 6
- Start Page
- 1003
- End Page
- 1007
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/15962
- DOI
- 10.1007/s12540-012-6012-5
- ISSN
- 1598-9623
- Abstract
- The wide band-gap semiconductor NiO has p-type characteristics and is an alternative to p-ZnO, due to conduction mechanisms coming from the Ni vacancies and O interstitials. The correlation between the electrical properties and point defects was studied with NiO thin films grown by sputtering at various temperatures and in pure Ar and O-2 atmospheres. The p-type characteristics of the NiO thin films were double-checked by Hall-effect and Seebeck coefficient measurements. Below 300 A degrees C, the electrical resistivity of NiO films grown in an O-2 atmosphere was lower than those grown in an Ar atmosphere due to the suppressed point defects. On the other hand, the electrical resistivity over 300 A degrees C became semi-insulating due to the relatively stoichiometric NiO. The optical transmittance of the NiO film deposited in an O-2 atmosphere and 600 A degrees C was around 80% in the visible region. Finally, the p-NiO/n-ZnO heterojunction diodes showed a well-rectifying current-voltage curve.
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Collections - 공과대학 > 신소재공학과 > 1. Journal Articles
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