Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Keun | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Kim, Tae-Hyeon | - |
dc.contributor.author | Bang, Suhyun | - |
dc.contributor.author | Choi, Yeon-Joon | - |
dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-27T03:42:10Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1606 | - |
dc.description.abstract | A resistive switching random-access memory (ReRAM) device with TiN/HfO2/SiO2/p(+)-Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO2 as a switching layer, SiO2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.subject | SYNAPSES | - |
dc.subject | DEVICE | - |
dc.title | Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000461020000007 | - |
dc.identifier.doi | 10.1016/j.sse.2019.02.008 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.154, pp.31 - 35 | - |
dc.identifier.scopusid | 2-s2.0-85062292101 | - |
dc.citation.endPage | 35 | - |
dc.citation.startPage | 31 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 154 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Tunneling barrier layer | - |
dc.subject.keywordAuthor | Resistive-switching random-access memory | - |
dc.subject.keywordAuthor | Potentiation | - |
dc.subject.keywordAuthor | Depression | - |
dc.subject.keywordAuthor | Synaptic plasticity | - |
dc.subject.keywordAuthor | Spike rate-dependent plasticity (SRDP) | - |
dc.subject.keywordPlus | SYNAPSES | - |
dc.subject.keywordPlus | DEVICE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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