Surface and Internal Reactions of ZnO Nanowires: Etching and Bulk Defect Passivation by H Atoms
- Authors
- Kim, Wooseok; Kwak, Geunjae; Jung, Minbok; Jo, Sam K.; Miller, James B.; Gellman, Andrew J.; Yong, Kijung
- Issue Date
- 2-Aug-2012
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.116, no.30, pp.16093 - 16097
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 116
- Number
- 30
- Start Page
- 16093
- End Page
- 16097
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16227
- DOI
- 10.1021/jp304191m
- ISSN
- 1932-7447
- Abstract
- Reactions of ZnO nanowires (NWs) with atomic hydrogen were investigated with temperature-programmed desorption (TPD) mass spectrometry, scanning electron microscopy, and photoluminescence (PL) spectroscopy. During TPD, molecular H-2, H2O, and atomic Zn desorbed from ZnO NWs pretreated with atomic H at 220 K. Three distinct H-2 TPD peaks, two from surface H states and one from a bulk H state, were identified. The TPD assignment of the bulk H state was corroborated by significantly suppressed emission at 564 nm and enhanced emission at 375 nm in PL experiments. Etching of ZnO NWs by atomic H was confirmed by desorption of molecular H2O and atomic Zn in TPD and by electron microscopic images of H-treated ZnO NWs. A mechanistic model for underlying H/ZnO NW reactions is proposed and discussed.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 바이오나노대학 > 나노화학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16227)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.