ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate
DC Field | Value | Language |
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dc.contributor.author | Hyung, Gun Woo | - |
dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Koo, Ja Ryong | - |
dc.contributor.author | Choi, Kyung Min | - |
dc.contributor.author | Kwon, Sang Jik | - |
dc.contributor.author | Cho, Eou Sik | - |
dc.contributor.author | Kim, Yong Seog | - |
dc.contributor.author | Kim, Young Kwan | - |
dc.date.available | 2020-02-29T06:44:55Z | - |
dc.date.created | 2020-02-05 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16553 | - |
dc.description.abstract | Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm(2)/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator. (c) 2011 Elsevier Ltd. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | PERFORMANCE | - |
dc.subject | STABILITY | - |
dc.subject | TFTS | - |
dc.title | ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000301561600008 | - |
dc.identifier.doi | 10.1016/j.sse.2011.12.001 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.69, pp.27 - 30 | - |
dc.identifier.scopusid | 2-s2.0-84857051519 | - |
dc.citation.endPage | 30 | - |
dc.citation.startPage | 27 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 69 | - |
dc.contributor.affiliatedAuthor | Choi, Kyung Min | - |
dc.contributor.affiliatedAuthor | Kwon, Sang Jik | - |
dc.contributor.affiliatedAuthor | Cho, Eou Sik | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Zinc oxide | - |
dc.subject.keywordAuthor | Thin-film transistor | - |
dc.subject.keywordAuthor | Atomic layer deposition (ALD) | - |
dc.subject.keywordAuthor | Plastic substrate | - |
dc.subject.keywordAuthor | Polymeric insulator | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | TFTS | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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