Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
- Authors
- Kang, Min-Seok; Ahn, Jung-Joon; Moon, Kyoung-Sook; Koo, Sang-Mo
- Issue Date
- 13-Jan-2012
- Publisher
- SPRINGEROPEN
- Citation
- NANOSCALE RESEARCH LETTERS, v.7, pp.1 - 8
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 7
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16627
- DOI
- 10.1186/1556-276X-7-75
- ISSN
- 1931-7573
- Abstract
- Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively. The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.
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