Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method
DC Field | Value | Language |
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dc.contributor.author | Jung, Yu Sup | - |
dc.contributor.author | Lee, Kyu Ho | - |
dc.contributor.author | Kim, Woo-Jae | - |
dc.contributor.author | Lee, Won-Jae | - |
dc.contributor.author | Choi, Hyung-Wook | - |
dc.contributor.author | Kim, Kyung Hwan | - |
dc.date.available | 2020-02-29T06:47:53Z | - |
dc.date.created | 2020-02-05 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16661 | - |
dc.description.abstract | Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm(2)/V s and threshold voltage of 5.13 V. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.relation.isPartOf | CERAMICS INTERNATIONAL | - |
dc.subject | CARRIER TRANSPORT | - |
dc.subject | OXIDE SEMICONDUCTOR | - |
dc.title | Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000299589800134 | - |
dc.identifier.doi | 10.1016/j.ceramint.2011.05.106 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.38, pp.S601 - S604 | - |
dc.identifier.scopusid | 2-s2.0-84655163929 | - |
dc.citation.endPage | S604 | - |
dc.citation.startPage | S601 | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 38 | - |
dc.contributor.affiliatedAuthor | Jung, Yu Sup | - |
dc.contributor.affiliatedAuthor | Lee, Kyu Ho | - |
dc.contributor.affiliatedAuthor | Kim, Woo-Jae | - |
dc.contributor.affiliatedAuthor | Lee, Won-Jae | - |
dc.contributor.affiliatedAuthor | Choi, Hyung-Wook | - |
dc.contributor.affiliatedAuthor | Kim, Kyung Hwan | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.subject.keywordAuthor | In-Ga-Zn-O | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Facing targets sputtering | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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