Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method

Abstract

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm(2)/V s and threshold voltage of 5.13 V. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.