Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method
- Authors
- Jung, Yu Sup; Lee, Kyu Ho; Kim, Woo-Jae; Lee, Won-Jae; Choi, Hyung-Wook; Kim, Kyung Hwan
- Issue Date
- Jan-2012
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Electrical properties; In-Ga-Zn-O; Thin film transistor; Facing targets sputtering
- Citation
- CERAMICS INTERNATIONAL, v.38, pp.S601 - S604
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 38
- Start Page
- S601
- End Page
- S604
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16661
- DOI
- 10.1016/j.ceramint.2011.05.106
- ISSN
- 0272-8842
- Abstract
- Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm(2)/V s and threshold voltage of 5.13 V. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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Collections - IT융합대학 > 전기공학과 > 1. Journal Articles
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