Theoretical frequency limit of organic field-effect transistors

Abstract

In this paper, a new theoretical model for the ac transit frequency of organic field-effect transistors is proposed. The model is built upon an advanced physical description of the contact resistance as a key mathematical component. Such a treatment self-consistently and predictively correlates the transit frequency to a number of materials, geometrical, and operational parameters. By navigating a broad parametric space, it is found that the ambitious gigahertz operation is observable only in highly downscaled devices, and the intrinsic carrier mobilities and charge-injection barriers required to reach that regime are specified.