Theoretical frequency limit of organic field-effect transistors
- Authors
- Kim, Chang-Hyun
- Issue Date
- Dec-2019
- Publisher
- IOP PUBLISHING LTD
- Keywords
- organic field-effect transistors; frequency limit; device physics; charge-carrier mobility; contact resistance
- Citation
- FLEXIBLE AND PRINTED ELECTRONICS, v.4, no.4
- Journal Title
- FLEXIBLE AND PRINTED ELECTRONICS
- Volume
- 4
- Number
- 4
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/17911
- DOI
- 10.1088/2058-8585/ab59cc
- ISSN
- 2058-8585
- Abstract
- In this paper, a new theoretical model for the ac transit frequency of organic field-effect transistors is proposed. The model is built upon an advanced physical description of the contact resistance as a key mathematical component. Such a treatment self-consistently and predictively correlates the transit frequency to a number of materials, geometrical, and operational parameters. By navigating a broad parametric space, it is found that the ambitious gigahertz operation is observable only in highly downscaled devices, and the intrinsic carrier mobilities and charge-injection barriers required to reach that regime are specified.
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