HfOx-based nano-wedge structured resistive switching memory device operating at sub-mu A current for neuromorphic computing application
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Keun | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Bang, Suhyun | - |
dc.contributor.author | Kim, Tae-Hyeon | - |
dc.contributor.author | Choi, Yeon-Joon | - |
dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-04-16T06:35:15Z | - |
dc.date.created | 2020-04-14 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/27297 | - |
dc.description.abstract | We fabricated a silicon based nano-wedge resistive switching memory device with the stack of Ti/HfOx/p(+)-Si. By using 25% tetra-methyl-ammonium hydroxide (TMAH) aqueous solution, the anisotropic wet etching process is carried out to minimize the tip structure of the silicon bottom electrode to a width of 4 nm, and the structure was validated through TEM analysis. Due to the minimized device area, low read current levels (mu A) were obtained in the nano-wedge RRAM while the opposites were measured in large size RRAM devices. In addition, the fabricated nano-wedge RRAM exhibited low power consumption during the DC switching process. Additionally, pulse measurement and retention tests were performed to demonstrate the synaptic behaviors of long-term potentiation and depression. Software neural network simulation was followed to test the feasibility of nano-wedge RRAM's array implementation. These results demonstrate the fabricated nano-wedge RRAM devices' potential usage as a synaptic device in neuromorphic computing systems. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.title | HfOx-based nano-wedge structured resistive switching memory device operating at sub-mu A current for neuromorphic computing application | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000522233200001 | - |
dc.identifier.doi | 10.1088/1361-6641/ab7656 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.5 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85083238927 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 35 | - |
dc.citation.number | 5 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | gradual-switching | - |
dc.subject.keywordAuthor | potentiation | - |
dc.subject.keywordAuthor | depression | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | nano-wedge | - |
dc.subject.keywordAuthor | 25% tetra-methyl-ammonium hydroxide (TMAH) | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordPlus | OPTIMIZATION | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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